TGF4260-SCC TriQuint, TGF4260-SCC Datasheet

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TGF4260-SCC

Manufacturer Part Number
TGF4260-SCC
Description
RF GaAs DC-10.5GHz 5 Watt HFET
Manufacturer
TriQuint
Datasheet

Specifications of TGF4260-SCC

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1014530

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Part Number:
TGF4260-SCC
Manufacturer:
Triquint
Quantity:
1 400
9.6 mm Discrete HFET
Description
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes.
The TGF4260-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465
Key Features and Performance
Primary Applications
9600 µm x 0.5 µm HFET
Nominal Pout of 37dBm at 6 GHz
Nominal Gain of 9.5dB at 6 GHz
Nominal PAE of 52% at 6 GHz
Frequency Range: DC - 10.5 GHz
Suitable for high reliability applications
0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Cellular Base Stations
High-reliability space
Military
Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGF4260-SCC
March 31, 2003
1

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TGF4260-SCC Summary of contents

Page 1

... Discrete HFET Description The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE. ...

Page 2

... These ratings apply to each individual FET TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet TABLE I MAXIMUM RATINGS 0 to -5.0 Volts -65 to 200°C Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4260-SCC VALUE NOTES 3/, 4/ 150°C 320°C 0 ...

Page 3

... Nominal Minimum Typical -- 2352 -- 1584 1 1. TABLE III ELECTRICAL CHARACTERISTICS = 25 °C, Nominal TABLE IV THERMAL INFORMATION* Test Conditions Vd = 8.5 V 101. 520 mA D Pdiss = 6.8 W Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4260-SCC Maximum Unit -- Typical Unit 37 dBm 9 qJC o ( ...

Page 4

... Bias Conditions GHz 8 795 mA 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0 TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet = 25 °C, Nominal Drain Voltage ( Input Power (dBm) Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4260-SCC Vg -2.25 V -2.0 V -1.75 V -1.5 V -1.25 V -1.0 V -0. ...

Page 5

... TYPICAL PERFORMANCE Bias Conditions GHz 8 795 TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet Input Power (dBm Input Power (dBm) Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4260-SCC ...

Page 6

... TYPICAL PERFORMANCE Bias Conditions GHz 8 795 Bias Conditions GHz 8 520 mA TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet Input Power (dBm) Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4260-SCC ...

Page 7

... Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4260-SCC S22 MAG ANG (°) dB deg -2.334 -175.122 9.671 -2.176 -176.556 6.854 -2.126 -176.745 5.622 -2.086 -176.594 5.098 -2 ...

Page 8

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Mechanical Drawing Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4260-SCC 8 ...

Page 9

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Assembly Process Notes Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4260-SCC 9 ...

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