TGF4240-SCC TriQuint, TGF4240-SCC Datasheet

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TGF4240-SCC

Manufacturer Part Number
TGF4240-SCC
Description
RF GaAs DC-12.0GHz 1.4 Watt HFET
Manufacturer
TriQuint
Datasheet

Specifications of TGF4240-SCC

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004308

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Part Number:
TGF4240-SCC
Quantity:
1 400
DESCRIPTION
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12
GHz in Class A and Class AB operation.
Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding
processes.
The TGF4240-SCC is readily assembled using automatic equipment.
2.4 mm Discrete HFET
TriQuint Semiconductor Texas : (972)994 8465
Primary Applications
Key Features and Performance
Fax: (972)994 8504 Web: www.triquint.com
2400 µm x 0.5 µm HFET
Nominal Pout of 31.5 dBm at 8.5 GHz
Nominal Gain of 10.0 dB at 8.5 GHz
Nominal PAE of 56 % at 8.5 GHz
Frequency Range: DC - 12 GHz
Suitable for high reliability applications
0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Cellular Base Stations
High-reliability space
Military
Product Data Sheet
TGF4240-SCC
March 31, 2003
1

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TGF4240-SCC Summary of contents

Page 1

... Discrete HFET DESCRIPTION The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output Gain, and 56% PAE. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes ...

Page 2

... These ratings apply to each individual FET TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet TABLE I MAXIMUM RATINGS 0 to -5.0 Volts -65 to 200°C Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4240-SCC VALUE NOTES 12 V TBD 2/ 3/, 4/ 150°C 320°C 0 ...

Page 3

... Minimum Typical -- 588 -- 396 1 1. TABLE III ELECTRICAL CHARACTERISTICS = 25 °C, Nominal Bias Conditions 100 mA TABLE IV THERMAL INFORMATION* Test Conditions 100 mA D Pdiss = TBD Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4240-SCC Maximum Unit -- Typical Unit 31.5 dBm qJC ...

Page 4

... TYPICAL PERFORMANCE Bias Conditions: Freq = 8.5 GHzm 100mA (T Pout (dBm) Gain (dB) PAE (%) Input Power - dBm TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet = 25 °C, Nominal) A Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4240-SCC 4 ...

Page 5

... Fax: (972)994 8504 Web: www.triquint.com March 31, 2003 TGF4240-SCC S22 MAG ANG (°) dB deg deg 56.129 -13.423 -116.099 36.651 -10.066 -135.107 25.761 -8.938 -144.013 19.133 -8.381 -148.390 14.702 -8 ...

Page 6

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Mechanical Drawing Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4240-SCC 6 ...

Page 7

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Assembly Process Notes Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet March 31, 2003 TGF4240-SCC 7 ...

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