TGF4118 TriQuint, TGF4118 Datasheet

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TGF4118

Manufacturer Part Number
TGF4118
Description
RF GaAs DC-6.0GHz 7 Watt HFET
Manufacturer
TriQuint
Datasheet

Specifications of TGF4118

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004415

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF4118
Manufacturer:
Triquint
Quantity:
1 400
Part Number:
TGF4118-EPU
Manufacturer:
Triquint
Quantity:
1 400
TriQuint Semiconductor Texas Phone: 972 994-8465
TGF4118-EPU
50
48
46
44
42
40
38
36
34
32
30
0.5 um gate finger length
Nominal Pout of 9.0 Watts at 2.3 GHz
Nominal PAE of 53% at 2.3 GHz
Nominal Gain of 11.5 dB at 2.3 GHz
Die Size 36.0 x 81.0 x 4.0 mils
(0.914 x 2.057 x 0.102 mm)
20
Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and T
TGF4118-EPU RF Performance at F = 2.3 GHz
Pout
PAE
22
24
Input Power (dBm)
18 mm Discrete HFET
February 23,2001
26
Fax 972 994-8504
28
30
ο
A
4118
= 25°C
Web: www.triquint.com
32
55
50
45
40
35
30
25
20
15
1

Related parts for TGF4118

TGF4118 Summary of contents

Page 1

... Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53% at 2.3 GHz • Nominal Gain of 11 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4118-EPU RF Performance 2.3 GHz 1.69 A and T 50 Pout 48 PAE ...

Page 2

... TGF4118-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.5 V) 130 120 110 100 Pout - TriQuint Semiconductor Texas Phone: 972 994-8465 Input Power (dBm) Fax 972 994-8504 = 25° Tch - ...

Page 3

... TGF4118-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V) 140 130 120 110 100 - TriQuint Semiconductor Texas Phone: 972 994-8465 Pout Input Power (dBm) Fax 972 994-8504 = 25° Tch 37 36 ...

Page 4

... TGF4118-EPU RF Performance for 2.3 GHz, and T Quiescent Id is 1.66 A (Vg = -1.1 V), 1.39 A (Vg = -1.3 V), and 1.09 A (Vg = -1.5 V) 160 150 140 130 120 110 100 90 Pout - TriQuint Semiconductor Texas Phone: 972 994-8465 Input Power (dBm) Fax 972 994-8504 = 25°C ...

Page 5

... DC Characteristics for the TGF4118-EPU DC probe Parameters IDSS Drain Saturation Current GM Transconductance VP Pinch Off Voltage BVGS Breakdown Voltage Gate-Source BVGD Breakdown Voltage Gate-Drain -2. 0.25 steps Absolute Maximum Ratings Drain-to-source Voltage, Vds..............................…………………………………………..........12 V Gate-to-source Voltage, Vgs..................… ...

Page 6

... TGF4118-EPU Linear Model Vds = 7 V and Ids = 1. 25°C FET Elements Lg = .00176 0.42115 Ω Rgs = 5447 Ω .05082 Ω Cgs = 18.82602 pF Cdg = 1.03674 pF Rdg = 13600 Ω 0.06265 Ω 0.00869 nH Rds = 6.40925 Ω Cds = 3.72019 0.01831 Ω 0.00195 nH VCCS Parameters M = 2.04398 1E19 ...

Page 7

... Thermal Model of TGF4118-EPU Predicted Channel Temperature vs Base Plate Temperature With a .020" CM15 (15/85 Copper Molybdenum) carrier plate solder attached 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 2.052 + 6.796 Pd + 0.1465 x (Predicted Channel Temperature equation for the given assembly stack up) This model assumes perfect solder connections (no voids) between the FET and the carrier plate ...

Page 8

... Mechanical Drawing of TGF4118-EPU 81.0 (2.057) 76.3 (1.938) 65.3 (1.659) 48.8 (1.239) 32.2 (0.819) 15.7 (0.399) 4.7 (0.119) 0.0 0.0 Alternate gate pad Units: mils (mm) Thickness: 4.0 (0.10) Gate pad sizes are 4.0 x 4.0 (0.10 x 0.10) Drain pad sizes are 4.7 x 14.5 (0.12 x 0.37) A minimum of four gate bonds and eight drain bonds is recommended for operation ...

Page 9

... Application circuit for the TGF4118-EPU at 2.3 GHz The FET is soldered using AuSn solder at 300 C for 30 secs. Input and Output matching networks are 0.381 mm ZrSn Tioxide substrates (Er = 38). The design load impedance is between 4 Ω and 5 Ω with the 6 pF output capacitance of the FETincluded in the output network. For further explanation refer to the application note “ ...

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