TGF4230-SCC TriQuint, TGF4230-SCC Datasheet
TGF4230-SCC
Specifications of TGF4230-SCC
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TGF4230-SCC Summary of contents
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... GHz Discrete HFET Description The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. ...
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... These ratings apply to each individual FET TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet TABLE I MAXIMUM RATINGS VALUE 0 to -5.0 Volts See Thermal Data -65 to 150°C Fax: (972)994 8504 Web: www.triquint.com December 16, 2002 TGF4230-SCC NOTES 12 V 2/, 3/ 150°C 320°C 2 ...
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... Note: The recommended bias current for HFETs is 80 mA/mm. For this 1.2 mm HFET mA. TriQuint Semiconductor Texas : (972)994 8465 TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical -- 294 -- 198 1 1. are negative III ° Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4230-SCC Maximum Unit Note -- ...
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... TYPICAL PERFORMANCE EXAMPLE OF DC I-V CURVES OUTPUT POWER VS. INPUT POWER POWER ADDED EFFICIENCY VS. INPUT POWER TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4230-SCC Fax: (972)994 8504 Web: www.triquint.com 4 ...
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... TYPICAL PERFORMANCE GAIN VS. INPUT POWER DRAIN CURRENT VS. INPUT POWER * TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4230-SCC Fax: (972)994 8504 Web: www.triquint.com 5 ...
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... THERMAL INFORMATION PREDICTED CHANNEL TEMPERATURE VS. BASE TEMPERATURE at 0.51 W and 1.02 W dissipated power HFET CHANNEL TEMPERATURE VS. MEDIAN LIFE TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4230-SCC Fax: (972)994 8504 Web: www.triquint.com 6 ...
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... 0. 1. 0.022 0.1004 Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4230-SCC MAG ANG(°) MAG ANG(° ) 0.021 72.66 0.343 -22.22 0.038 58.80 0.328 -41.75 0.050 47.65 0.312 -57.46 0.057 39.12 0.301 -69.57 0.062 32.60 0.295 -78.80 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Mechanical Drawing Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4230-SCC 8 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Assembly Process Notes Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4230-SCC 9 ...