UPA801T-T1 NEC, UPA801T-T1 Datasheet

UPA801T-T1

Manufacturer Part Number

UPA801T-T1

Description

RF Bipolar Small Signal NPN High Frequency

Manufacturer

NEC

Datasheet

1.UPA801T-T1-A.pdf (8 pages)

Specifications of UPA801T-T1

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.1 A

Power Dissipation

0.11 W

Package / Case

SO-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Download datasheet (178Kb)

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• HIGH COLLECTOR CURRENT: 100mA

NEC's UPA801T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

suited for pager and other hand-held wireless applications.

ELECTRICAL CHARACTERISTICS

DESCRIPTION

Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

FEATURES

SYMBOLS

, low voltage bias and small size make this device ideally

2 NE856 Die in a 2 mm x 1.25 mm package

NF = 1.2 dB TYP at 1 GHz

FE1

Cre

CBO

EBO

21E

FE 1

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA801T-T1, 3K per reel.

FE2

= 9.0 dB TYP at 1 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

Ratio: h

PARAMETERS AND CONDITIONS

FE1

FE2

PACKAGE OUTLINE

= Smaller Value of Q

= Larger Value pf Q

PART NUMBER

= 3 V, I

FREQUENCY TRANSISTOR

= 7 mA, f = 1 GHz

= 1 V, I

= 3 V, I

= 10 V, I

= 7 mA

or Q

= 7 mA, f = 1 GHz

or Q

= 0

= 7 mA

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

2.0 ± 0.2

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

OUTLINE DIMENSIONS

Note:

Pin 3 is identified with a circle on the bottom of the package.

0.9 ± 0.1

1.3

0.7

0.65

California Eastern Laboratories

0.85

MIN

3.0

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

UPA801T

TYP

S06

120

4.5

0.7

1.2

(Units in mm)

UPA801T

0.2 (All Leads)

0.15

MAX

250

1.0

1.5

2.5

+0.10

- 0.05

Related parts for UPA801T-T1

UPA801T-T1 Summary of contents

Page 1

... Larger Value pf Q FE2 Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA801T-T1, 3K per reel. . NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... UPA801T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T 1 Die 2 Die T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage ...

Page 3

... Collector Current FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5 MHz 2.0 1.0 0.5 0.2 0 Collector to Base Voltage 25° GHz 50 (mA GHz 50 100 (mA (V) CB UPA801T INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 0 100 Collector Current, I (mA) C INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 0.5 1.0 2 ...

Page 4

... UPA801T TYPICAL SCATTERING PARAMETERS UPA801T mA Ω Ω Ω Ω Ω FREQUENCY S 11 (GHz) MAG ANG 0.10 .967 -22.9 0.20 .930 -45.8 0.30 .884 -67.1 0.40 .842 -86.9 0.50 .801 -103.1 0.60 .771 -117.0 0.70 .742 -130.0 0.80 .722 -141.2 0.90 .706 -151 ...

Page 5

... ORDERING INFORMATION PART NUMBER QUANTITY UPA801T-T1-A 3000 (T = 25° MAG ANG MAG ANG 8.934 148.0 .038 65.8 8.007 127.6 .060 53.1 6.898 112 ...

Page 6

NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1, Q2 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR 3.9 ITF ...

Page 7

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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