NE5511279A

Manufacturer Part NumberNE5511279A
DescriptionRF MOSFET Small Signal RO 551-NE5511279A-A
ManufacturerNEC
NE5511279A datasheet
 


Specifications of NE5511279A

Transistor PolarityN-ChannelDrain-source Breakdown Voltage20 V
Gate-source Breakdown Voltage6 VContinuous Drain Current3 A
Power Dissipation20 WMounting StyleSMD/SMT
Forward Transconductance Gfs (max / Min)0.0023 SPackage / Case79A
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER:
P
= 40.0 dBm TYP., f = 900 MHz, V
out
P
= 40.5 dBm TYP., f = 460 MHz, V
out
• HIGH POWER ADDED EFFICIENCY:
= 48% TYP., f = 900 MHz, V
η
add
DS
= 50% TYP., f = 460 MHz, V
η
add
DS
• HIGH LINEAR GAIN:
G
= 15.0 dB TYP., f = 900 MHz, V
L
G
= 18.5 dB TYP., f = 460 MHz, V
L
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
V
= 2.8 to 8.0 V
DS
APPLICATIONS
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
P
Output Power
out
I
Drain Current
D
Power Added Efficiency
η
add
G
Linear Gain
L
P
Output Power
out
I
Drain Current
D
Power Added Efficiency
η
add
G
Linear Gain
L
I
Gate to Source Leak Current
GSS
Drain to Source Leakage Current
I
DSS
(Zero Gate Voltage Drain Current)
V
Gate Threshold Voltage
th
R
Thermal Resistance
th
g
Transconductance
m
BV
Drain to Source Breakdown Voltage
DSS
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
NEC'
7.5 V UHF BAND
S
OUTLINE DIMENSIONS
= 7.5 V,
DS
= 7.5 V,
DS
= 7.5 V,
= 7.5 V,
= 7.5 V,
DS
= 7.5 V,
DS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for 7.5 V radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device can deliver 40.0 dBm
output power with 48% power added efficiency at 900 MHz
using a 7.5 V supply voltage.
(T
= 25°C)
A
MIN
TYP
38.5
40.0
2.5
42
48
15.0
40.5
2.75
50
18.5
1.0
1.5
5
2.3
20
24
NE5511279A
(Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
Source
Gate
Drain
Gate
0.4±0.15
5.7 MAX.
MAX
UNIT
TEST CONDITIONS
dBm
f = 900 MHz, V
= 7.5 V,
DS
A
P
= 27 dBm,
in
%
I
= 400 mA (RF OFF)
DSQ
dB
P
= 5 dBm
in
dBm
f = 460 MHz, V
= 7.5 V,
DS
A
P
= 25 dBm,
in
%
I
= 400 mA (RF OFF)
DSQ
dB
P
= 5 dBm
in
100
nA
V
= 6.0 V
GS
100
nA
V
= 8.5 V
DS
2.0
V
V
= 4.8 V, I
= 1.5 mA
DS
DS
Channel to Case
°C/W
S
V
= 3.5 V, I
= 900 mA
DS
DS
V
I
= 15 μA
DSS
California Eastern Laboratories
(Bottom View)
1.5±0.2
Source
Drain
0.8 MAX.
3.6±0.2

NE5511279A Summary of contents

  • Page 1

    ... DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manu- factured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added effi ...

  • Page 2

    ... Input Power,P (dBm) in RECOMMENDED OPERATING LIMITS °C) A SYMBOLS UNITS RATINGS °C 125 °C -55 to +125 ORDERING INFORMATION PART NUMBER NE5511279A-T1-A NE5511279A-T1A-A Drain (T = 25° out 4 100 η η add PARAMETERS UNITS TYP Drain to Source Voltage V 7.5 Gate Supply Voltage V 2 ...

  • Page 3

    ... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

  • Page 4

    Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...