NE5511279A NEC, NE5511279A Datasheet

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NE5511279A

Manufacturer Part Number
NE5511279A
Description
RF MOSFET Small Signal RO 551-NE5511279A-A
Manufacturer
NEC
Datasheet
1.NE5511279A-A.pdf (4 pages)

Specifications of NE5511279A

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
3 A
Power Dissipation
20 W
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
0.0023 S
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE5511279A-T1-A
Manufacturer:
NEC
Quantity:
1 000
APPLICATIONS
ELECTRICAL CHARACTERISTICS
Notes:
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
FEATURES
• HIGH OUTPUT POWER:
• HIGH POWER ADDED EFFICIENCY:
• HIGH LINEAR GAIN:
• SURFACE MOUNT PACKAGE:
• SINGLE SUPPLY:
SYMBOL
P
P
η
η
G
G
5.7 x 5.7 x 1.1 mm MAX
V
BV
add
add
out
out
DS
L
L
η
η
I
I
P
P
V
R
G
G
GSS
g
DSS
= 15.0 dB TYP., f = 900 MHz, V
= 18.5 dB TYP., f = 460 MHz, V
I
I
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
add
add
out
D
out
D
th
m
DSS
th
= 40.5 dBm TYP., f = 460 MHz, V
= 2.8 to 8.0 V
= 40.0 dBm TYP., f = 900 MHz, V
L
L
= 48% TYP., f = 900 MHz, V
= 50% TYP., f = 460 MHz, V
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
PARAMETER
RF POWER SILICON LD-MOS FET
DS
DS
DS
DS
= 7.5 V,
= 7.5 V,
= 7.5 V,
= 7.5 V,
DS
DS
= 7.5 V,
= 7.5 V,
NEC'
(T
38.5
MIN
1.0
42
20
−
−
−
−
−
−
−
−
−
−
A
= 25°C)
S
TYP
40.0
15.0
40.5
2.75
18.5
7.5 V UHF BAND
2.5
1.5
2.3
48
50
24
−
−
5
OUTLINE DIMENSIONS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for 7.5 V radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device can deliver 40.0 dBm
output power with 48% power added efficiency at 900 MHz
using a 7.5 V supply voltage.
MAX
100
100
2.0
Gate
−
−
−
−
−
−
−
−
−
−
−
California Eastern Laboratories
4.2 MAX.
5.7 MAX.
UNIT
°C/W
dBm
dBm
Source
dB
dB
nA
nA
%
%
A
A
V
S
V
PACKAGE OUTLINE 79A
0.4±0.15
f = 900 MHz, V
P
I
P
f = 460 MHz, V
P
I
P
V
V
V
Channel to Case
V
I
DSQ
DSQ
DSS
in
in
in
in
GS
DS
DS
DS
Drain
= 27 dBm,
= 5 dBm
= 25 dBm,
= 5 dBm
= 8.5 V
= 4.8 V, I
= 3.5 V, I
= 6.0 V
= 15 μA
= 400 mA (RF OFF)
= 400 mA (RF OFF)
TEST CONDITIONS
NE5511279A
(Units in mm)
DS
DS
DS
DS
= 1.5 mA
= 900 mA
= 7.5 V,
= 7.5 V,
Gate
(Bottom View)
1.5±0.2
Source
3.6±0.2
0.8 MAX.
Drain

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NE5511279A Summary of contents

Page 1

... DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manu- factured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added effi ...

Page 2

... Input Power,P (dBm) in RECOMMENDED OPERATING LIMITS °C) A SYMBOLS UNITS RATINGS °C 125 °C -55 to +125 ORDERING INFORMATION PART NUMBER NE5511279A-T1-A NE5511279A-T1A-A Drain (T = 25° out 4 100 η η add PARAMETERS UNITS TYP Drain to Source Voltage V 7.5 Gate Supply Voltage V 2 ...

Page 3

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 4

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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