BLF3G21-30 NXP Semiconductors, BLF3G21-30 Datasheet
BLF3G21-30
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BLF3G21-30 Summary of contents
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... BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 450 mA Mode of operation CW Two-tone Table Mode of operation PHS CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Simplified outline Symbol 1 [ Min Max - 4.5 ...
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... Application information = 25 C unless otherwise specified. h Parameter power gain input return loss drain efficiency third order intermodulation distortion power gain drain efficiency Dq power gain drain efficiency Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Conditions L(AV L(AV) Min = 0.7 mA ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF3G21-30 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2200 MHz at rated load power (dB 450 mA Fig 1. Power gain as function of CW load power; typical values (dB 450 mA 2000 MHz 2000.1 MHz ...
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... Product data sheet 001aaf794 (pF) (3) (7) (5) 0.5 1.0 f (MHz Fig 6. C 001aaf796 2.1 2.2 f (GHz Fig 8. Load impedance as function of frequency Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor oss C C iss 10 C rss and C as functions of drain supply iss rss oss voltage ...
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input Fig 9. Class-AB test circuit for 2 GHz R1 C11 C12 V gate C6 C5 L12 C10 L10 C9 L14 L11 L15 L13 ...
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... The other side is unetched and serves as a ground plane. See Table 9 for a list of components. Fig 10. Component layout for 2 GHz class-AB test circuit BLF3G21-30_1 Product data sheet 50 mm PH98072 IN C16 PH98072 IN Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor PH98073 OUT C15 C13 C14 C11 F1 C12 R2 C10 C9 ...
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... W Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Dimensions Catalogue No. 2222 581 16641 2222 037 58101 8DS3/3/8/9-4S2 4330 030 36301 1.9 mm 7 ...
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... REFERENCES JEDEC EIAJ Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor 2.21 20.45 5.97 14.27 0.25 0.51 1.96 20 ...
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... Personal HandyPhone System Radio Frequency Surface-Mount Device Ultra High Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 February 2007 Document identifier: BLF3G21-30_1 ...