BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 10

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.
2003 Sep 19
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
th(mb-h)
of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
7.38
3.60
Fig.15 Footprint SOT409A.
1.87 (2 )
10
4.60
1.00 (9 )
0.60 (4 )
MGK390
0.80 (2 )
1.00 (8 )
0.50 (12 )
Product specification
BLF202