BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 14

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BLF202 T/R

Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202 T/R

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613524/02/pp
14
Date of release:
2003 Sep 19
Fax: +31 40 27 24825
Document order number:
9397 750 11595
SCA75

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