BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 2

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BLF202 T/R

Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202 T/R

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
QUICK REFERENCE DATA
RF performance at T
2003 Sep 19
CW, class-B
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch.
Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
HF/VHF power MOS transistor
MODE OF OPERATION
mb
= 25 C in a common source test circuit.
(MHz)
175
f
CAUTION
2
12.5
V
(V)
PINNING - SOT409A
DS
handbook, halfpage
PIN
1, 8
2, 3
4, 5
6, 7
(W)
P
2
L
Fig.1 Simplified outline.
1
Top view
8
source
gate
source
drain
(dB)
G
MBK150
10
DESCRIPTION
p
5
4
Product specification
BLF202
(%)
50
D

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