BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 3

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 19
V
V
I
P
T
T
R
handbook, halfpage
D
stg
j
DS
GS
tot
SYMBOL
SYMBOL
th j-mb
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 85 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
mounting base
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DSon
.
MCD789
10
2
T
T
3
mb
mb
85 C
85 C; P
CONDITIONS
CONDITIONS
tot
= 5.7 W
MIN.
65
VALUE
20.5
Product specification
40
1
5.7
150
200
MAX.
20
BLF202
UNIT
K/W
V
V
A
W
UNIT
C
C