BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 5

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
V
Fig.3
R DSon
V
Fig.5
(mV/K)
DS
GS
T.C.
( )
= 10 V.
= 15 V; I
15
10
5
4
3
2
1
0
5
0
5
0
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
D
= 0.3 A.
40
10
80
10
2
120
I D (mA)
T j ( C)
MGP113
MGP111
160
10
3
5
handbook, halfpage
handbook, halfpage
V
Fig.4
V
Fig.6
(mA)
DS
GS
1600
I D
1200
(pF)
800
400
C
= 10 V; T
= 0; f = 1 MHz.
30
20
10
0
0
0
0
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
Drain current as a function of gate-source
j
= 25 C.
C os
C is
4
4
8
8
12
Product specification
12
16
V DS (V)
V GS (V)
BLF202
MGP112
MGP114
16
20