BLF1043 NXP Semiconductors, BLF1043 Datasheet - Page 2

• Manufacturer Part Number: BLF1043
• Description: RF MOSFET Power RF LDMOS 10W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1043

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.05 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-538-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1043,112

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 1000 MHz.
QUICK REFERENCE DATA
RF performance at T
2003 Mar 13
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CW, 2-tone, class-AB
CW, 1-tone, class-AB
Typical 2-tone performance at a supply voltage of 26 V
and I
– Output power = 10 W (PEP)
– Gain = 18.5 dB
– Efficiency = 40%
– d
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 1000 MHz)
No internal matching for broadband operation
SMD package.
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the 800 to
1000 MHz frequency range
Broadcast drivers.
MODE OF OPERATION
UHF power LDMOS transistor
im
DQ
= 31 dBc
of 85 mA
h
= 25 C in a common source test circuit.
f
1
= 960; f
f = 960
(MHz)
f
2
= 960.1
CAUTION
V
(V)
26
26
DS
2
PINNING - SOT538A
(mA)
I
85
85
DQ
PIN
1
2
3
10 (PEP)
(W)
Fig.1 Simplified outline.
P
10
Top view
L
drain
gate
source, connected to flange
1
2
(dB)
18.5
18.5
G
p
DESCRIPTION
Product specification
3
(%)
MBK905
40
52
D
BLF1043
(dBc)
d
im
31