BLF6G38LS-50 NXP Semiconductors, BLF6G38LS-50 Datasheet

RF MOSFET Small Signal LDMOS TNS

BLF6G38LS-50

Manufacturer Part Number
BLF6G38LS-50
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38LS-50

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
16.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
70W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
5.6S
Drain Source Resistance (max)
290@6.15Vmohm
Reverse Capacitance (typ)
1.17@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
23%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38LS-50,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G38LS-50
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF6G38LS-50
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF6G38LS-50
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BLF6G38LS-50
Manufacturer:
NXP
Quantity:
19 764
Part Number:
BLF6G38LS-50
Manufacturer:
NXP
Quantity:
3 931
1. Product profile
Table 1.
Typical RF performance at T
[1]
[2]
[3]
Mode of operation f (MHz)
1-carrier N-CDMA
CAUTION
P
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
L(M)
stands for peak output power.
Typical performance
1.1 General description
1.2 Features and benefits
[2]
3400 to 3600 28
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
case
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
Qualified up to a maximum V
Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
= 25
V
°
DS
C in a class-AB production test circuit.
(V) P
9
L(AV)
(W) P
70
L(M)
DS
[1]
operation of 32 V
(W) G
14
p
(dB) η
23
D
(%) ACPR
−49
[3]
885k
(dBc) ACPR
Product data sheet
Dq
−64
of 450 mA, a
[3]
1980k
(dBc)

Related parts for BLF6G38LS-50

BLF6G38LS-50 Summary of contents

Page 1

... BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance case Mode of operation f (MHz) [2] 1-carrier N-CDMA 3400 to 3600 28 ...

Page 2

... NXP Semiconductors 1.3 Applications RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range 2. Pinning information Table 2. Pin BLF6G38-50 (SOT502A BLF6G38LS-50 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G38-50 BLF6G38LS-50 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... D ACPR 885k ACPR 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 Thermal characteristics Parameter Conditions ...

Page 4

... 450 mA 3500 MHz Fig 1. EVM as a function of average load power; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 Frame structure 2 symbols × 4 subchannels FCH 2 symbols × 26 subchannels data 44 symbols × 30 subchannels data 001aah395 (dB (W) L(AV) Fig 2. All information provided in this document is subject to legal disclaimers. ...

Page 5

... 450 mA; Single Carrier N-CDMA PAR = 9 0.01 % probability; IBW = 30 kHz. Fig 4. Power gain and drain efficiency as functions of frequency; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 −20 ACPR (dBc) −30 −40 −50 −60 − 450 mA 3500 MHz MHz ...

Page 6

... Single Carrier N-CDMA PAR = 9 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 8. Power gain as a function of load power; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 001aah400 −30 40 η ACPR D (dBc) (%) −40 30 −50 20 − ...

Page 7

... American Technical Ceramics type 100A or capacitor of same quality. [2] Vishay VJ1206Y104KXB or capacitor of same quality. [3] TDK C5750X7R1H106M or capacitor of same quality. Table 10. f (GHz) 3.4 3.5 3.6 3.8 BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS- BLF6G38-50 INPUT-REV 1A 30RF35 NXP Value 10 pF 0.7 pF 100 nF 10 μ 470 μ ...

Page 8

... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G38-50_BLF6G38LS-50 v.2 Modifications: BLF6G38-50_BLF6G38LS-50_1 BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor ...

Page 11

... BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... For sales office addresses, please send an email to: BLF6G38-50_BLF6G38LS-50 Product data sheet BLF6G38-50; BLF6G38LS-50 liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G38-50_BLF6G38LS-50 All rights reserved. Date of release: 1 June 2010 ...

Related keywords