BF556C T/R NXP Semiconductors, BF556C T/R Datasheet

RF JFET TAPE7 FET-RFSS

BF556C T/R

Manufacturer Part Number
BF556C T/R
Description
RF JFET TAPE7 FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF556C215.pdf (13 pages)

Specifications of BF556C T/R

Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
- 30 V
Continuous Drain Current
18 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF556C,215
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
Table 1:
Symbol
V
V
I
P
DSS
y
DS
GSoff
tot
fs
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage.
Impedance converters in e.g. electret microphones and infrared detectors
VHF amplifiers in oscillators and mixers.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
Quick reference data
Parameter
drain-source
voltage (DC)
gate-source cut-off
voltage
drain current
total power
dissipation
forward transfer
admittance
Conditions
I
V
V
T
V
D
amb
DS
GS
GS
BF556A
BF556B
BF556C
= 200 A;
= 15 V
= 0 V; V
= 0 V; V
25 C
DS
DS
= 15 V
= 15 V
Min
-
3
6
11
-
4.5
Product data sheet
0.5
Typ
-
-
-
-
-
-
-
Max
7
13
18
250
-
30
7.5
Unit
V
V
mA
mA
mA
mW
mS

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BF556C T/R Summary of contents

Page 1

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin Ordering information Table 3: Type number BF556A BF556B BF556C 4. Marking Table 4: Type number BF556A BF556B BF556C [ made in Hong Kong ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol GSO V GDO tot T stg T j [1] Device mounted on an FR4 printed-circuit board, ...

Page 4

Philips Semiconductors 7. Static characteristics Table 7: Static characteristics unless otherwise specified. j Symbol Parameter V gate-source breakdown voltage (BR)GSS V gate-source cut-off voltage GSoff I drain current DSS I gate-source leakage current GSS y forward ...

Page 5

Philips Semiconductors 8. Dynamic characteristics Table 8: Dynamic characteristics unless otherwise specified. j Symbol Parameter C input capacitance iss C reverse transfer capacitance rss g common source input is conductance g common source transfer fs conductance ...

Page 6

Philips Semiconductors 100 Fig 4. Common-source output conductance as a function of gate-source cut-off voltage; typical values (mA ...

Page 7

Philips Semiconductors (mA BF556C ( ( (5) ...

Page 8

Philips Semiconductors GSS (pA Fig 12. Gate current as a function of junction temperature; typical values ...

Page 9

Philips Semiconductors (mS) ( amb ( ( Fig 16. Common-source ...

Page 10

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 11

Philips Semiconductors 10. Revision history Table 9: Revision history Document ID BF556A_BF556B_BF556C_3 Modifications: BF556A-B-C_2 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Release Data sheet status date 20040805 Product data sheet • The format ...

Page 12

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 13

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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