BLF248 NXP Semiconductors, BLF248 Datasheet

RF MOSFET Power RF DMOS 300W VHF P-P

BLF248

Manufacturer Part Number
BLF248
Description
RF MOSFET Power RF DMOS 300W VHF P-P
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF248

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-262-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF248,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF248
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF248
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF248
Manufacturer:
ASI
Quantity:
20 000
Product specification
Supersedes data of 1997 Dec 17
DATA SHEET
BLF248
VHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 02

Related parts for BLF248

BLF248 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste (MHz) (V) 225 28 175 28 2 Product specification BLF248 MBB157 CAUTION WARNING (W) (dB) ...

Page 3

... V DS (V) . (1) Continuous operation. DSon (2) Short-time operation during mismatch. Total device; both sections equally loaded. 3 Product specification CONDITIONS MIN. 65 CONDITIONS VALUE 0.35 0.15 (2) ( 100 Fig.3 Power derating curves. BLF248 MAX. UNIT 500 W 150 C UNIT K/W K/W MGP203 150 ...

Page 4

... TYP. MAX. UNIT MHz 500 = MHz 360 = MHz 46 LIMITS (V) MIN. O 3.3 P 3.4 Q 3.5 R 3.6 S 3.7 T 3.8 U 3.9 V 4.0 W 4.1 X 4.2 Y 4.3 Z 4.4 BLF248 4.5 V 100 mV S 1.1 0. MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 ...

Page 5

... Fig.5 MGP206 1500 handbook, halfpage C (pF) 1000 500 100 150 Fig.7 5 Product specification Drain current as a function of gate-source voltage; typical values per section MHz. Input and output capacitance as functions of drain-source voltage; typical values per section. BLF248 MGP205 (V) MGP207 (V) ...

Page 6

... RF performance in a linear amplifi common source class-AB circuit 536 per section; optimum load impedance per section = 0.79 GS MODE OF OPERATION class-AB Ruggedness in class-AB operation The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions 225 MHz at rated output power. DS 2003 Sep 02 MGP208 30 ...

Page 7

... Sep 02 MGP209 80 handbook, halfpage (%) 300 400 P L (W) 250 mA; Class-AB operation; V j0.11 (per R section 225 MHz. Fig.10 Load power as a function of input power; 7 Product specification 400 300 70 C 200 100 250 mA 536 (per section 0.79 j0. typical values. BLF248 MGP210 (W) (per ...

Page 8

Acrobat reader. white to force landscape pages to be ... input IC1 R9 ...

Page 9

... V 3 100 pF in parallel, 500 ext. dia. 3.6 mm ext. conductor length 32 10 parallel 25 nH int. dia leads space 2 Product specification BLF248 CATALOGUE NO. 2222 809 09005 2222 809 08003 2222 852 47104 2222 809 09006 4312 020 36642 ...

Page 10

... L1 L11, L16 to L22 and L24 are micro-striplines on a double copper-clad printed-circuit board, with glass microfibre PTFE dielectric ( 3. L2 and L23 are soldered on striplines L1 and L24 respectively copper strap, thickness 0.8 mm, is soldered on striplines L16 to L21. 2003 Sep 02 VALUE 536 10 3. 2.2), thickness inch, thickness of copper sheet DIMENSIONS Product specification BLF248 CATALOGUE NO. ...

Page 11

... L14 C7 slider R6 C19 copper strap C14 11 Product specification 130 C16 C12 L12 C17 R7 L12 L22 V DD1 hollow rivet C29 L20 L18 hollow rivets C27 C28 L19 L21 C30 V DD2 L24 L15 L23 R8 C20 L15 copper strap C15 C21 BLF248 MGP213 ...

Page 12

... Class-AB operation 300 W (total device Fig.14 Load impedance as a function of frequency MGP216 200 250 f (MHz) 250 mA; 12 Product specification 100 150 = 250 mA 536 (per section (series components); typical values per section. BLF248 MGP217 200 250 f (MHz) ...

Page 13

... Philips Semiconductors VHF push-pull power MOS transistor BLF248 scattering parameters 250 mA; note (MHz 0.85 158.7 10 0.85 168.6 20 0.85 173.2 30 0.86 174.1 40 0.87 174.3 50 0.88 174.4 60 0.89 174.6 70 0.90 174.8 80 0.91 175.1 90 0.92 175.5 100 0.93 175.8 125 0.95 176.7 150 0.96 177 ...

Page 14

... REFERENCES JEDEC EIAJ 17.02 3.28 2.85 34.17 9.91 27.94 16.51 3.02 2.59 33.90 9.65 0.670 0.129 0.112 1.345 0.390 1.100 0.119 0.102 0.650 1.335 0.380 EUROPEAN PROJECTION Product specification BLF248 SOT262A1 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-03-29 ...

Page 15

... Product specification BLF248 DEFINITION These products are not Philips Semiconductors ...

Page 16

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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