BLF368 NXP Semiconductors, BLF368 Datasheet - Page 12

• Manufacturer Part Number: BLF368
• Description: RF MOSFET Power BULK TNS-RFUH
• Manufacturer: NXP Semiconductors

Specifications of BLF368

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF368,112

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
Fig.14 Input impedance as a function of frequency
Class-AB operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
G p
( )
Z i
= 536
= 536
20
16
12
2
1
0
1
2
8
4
0
150
150
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
= 32 V; I
= 32 V; I
L
L
= 300 W.
= 300 W.
x i
r i
200
200
DQ
DQ
= 2
= 2
250 mA;
250 mA;
f (MHz)
f (MHz)
MGP242
MGP244
250
250
12
handbook, halfpage
Class-AB operation; V
R
Fig.15 Load impedance as a function of frequency
GS
( )
Z L
= 536
2
1
0
150
(series components); typical values per
section.
(per section); P
DS
R L
X L
= 32 V; I
L
= 300 W.
200
DQ
= 2
250 mA;
f (MHz)
Product specification
BLF368
MGP243
250