BLF1046 NXP Semiconductors, BLF1046 Datasheet

RF MOSFET Power RF LDMOS 45W UHF

BLF1046

Manufacturer Part Number
BLF1046
Description
RF MOSFET Power RF LDMOS 45W UHF
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF1046

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-467-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF1046,112

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Product specification
Supersedes data of 2000 Oct 04
DATA SHEET
BLF1046
UHF power LDMOS transistor
DISCRETE SEMICONDUCTORS
M3D381
2000 Dec 20

Related parts for BLF1046

BLF1046 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLF1046 UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 04 M3D381 2000 Dec 20 ...

Page 2

... Dec 20 PINNING - SOT467C (MHz) ( 960 960 960 26 PARAMETER CAUTION 2 Product specification PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange Top view MBK584 Fig.1 Simplified outline (W) (dB) (%) 45 (PEP) >14 >35 45 >14 >46 MIN. MAX 4.5 65 +150 200 BLF1046 d im (dBc) 26 UNIT ...

Page 3

... MODE OF OPERATION CW, class-AB (2-tone CW, class-AB (1-tone) Ruggedness in class-AB operation The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 960 MHz at rated load power. DS Tuning Procedure For high gain and efficiency mode ( ...

Page 4

... DQ h Power gain and drain efficiency as functions of load power; typical values (dB) 20 (1) ( 960 MHz 960.1 MHz 240 mA 300 mA 400 mA. DQ Third order intermodulation distortion as a function of peak envelope load power; typical values. Product specification BLF1046 MLD456 80 D (%) (W) MLD458 (PEP) (W) ...

Page 5

... MHz 240 mA 300 mA 400 mA. DQ Seventh order intermodulation distortion as a function of peak envelope load power; typical values (dB EVM (%) EVM 300 mA 960 MHz EDGE 8PSK EVM, gain and efficiency as functions of load power; typical values. Product specification BLF1046 MLD460 (PEP) (W) MLD462 40 (%) (W) ...

Page 6

... Measured in broadband test circuit; see Figs. 15 and 16. Fig.11 Power gain and drain efficiency as functions MLD465 950 1000 f (MHz Product specification (dB 850 900 950 = 300 mA (PEP frequency; typical values. BLF1046 MLD464 80 D (%) 1000 f (MHz ...

Page 7

... Dec 20 MLD468 handbook, halfpage 920 960 f (MHz tuned for high linearity; see tuning procedure. Fig.14 Optimal load impedance as a function of 7 Product specification 840 880 920 = 300 mA frequency (series components); typical values. BLF1046 MLD469 960 f (MHz) ...

Page 8

... The other side is unetched and serves as a ground plane. Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit. 2000 Dec 20 R5 C14 R2 R3 C11 adjustment R1 C13 C11 R3 C10 Product specification V DS (26 V) C15 ground C12 C15 C14 output MLD467 = 2.2), thickness 0.79 mm. r BLF1046 50 output MLD466 ...

Page 9

... The striplines are on a double copper-clad printed-circuit board with Teflon dielectric ( r = 2.2); thickness 0.79 mm. 2000 Dec 20 VALUE DIMENSIONS 0.8 to 8.2 pF 0 int. dia mm; length = 5 mm int. dia mm; length = 1 2.36 mm 42.5 16 3 Product specification BLF1046 CATALOGUE NO. 4330 030 36301 ...

Page 10

... REFERENCES JEDEC EIAJ 10 Product specification 2.21 20.45 5.97 14.27 0.25 1.96 20.19 5.72 0.087 0.805 0.235 0.562 0.010 0.020 0.077 0.795 0.225 EUROPEAN PROJECTION BLF1046 SOT467C 0.51 ISSUE DATE 99-12-06 99-12-28 ...

Page 11

... Product specification BLF1046 (1) These products are not Philips Semiconductors ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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