BLF2043F /T3 NXP Semiconductors, BLF2043F /T3 Datasheet - Page 6

• Manufacturer Part Number: BLF2043F /T3
• Description: RF MOSFET Power RF LDMOS 10W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF2043F /T3

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF2043F,135

Philips Semiconductors
2002 Mar 05
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Impedance measured at reference planes.
Fig.8
DS
( )
Z i
50
input
= 26 V; I
8
6
4
2
0
1.8
Input impedance as a function of frequency
(series components); typical values.
V gate
L1
DQ
= 85 mA; P
1.9
C1
C2
L
C6
= 10 W; T
C3
L2
2.0
x i
r i
h
R1
L3
25 C.
2.1
C4
Fig.10 Class-AB test circuit for 2.2 GHz.
f (GHz)
MGW648
L4
2.2
C5
L5
6
handbook, halfpage
C7
V
Impedance measured at reference planes.
Fig.9
DS
( )
Z L
C11
= 26 V; I
L6
C8
6
4
2
0
2
4
6
L9
1.8
Load impedance as a function of frequency
(series components); typical values.
DQ
C12
L7
C9
L10
= 85 mA; P
C10
1.9
L8
C18
C13
L
MGW650
= 10 W; T
output
50
2.0
C19
C14
h
25 C.
Product specification
C20
C15
2.1
BLF2043F
R L
X L
f (GHz)
MGW649
C16
V DD
2.2
C17