BLF2043F NXP Semiconductors, BLF2043F Datasheet - Page 3

• Manufacturer Part Number: BLF2043F
• Description: RF MOSFET Small Signal BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF2043F

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohmss
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Min)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF2043F,112

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
2002 Mar 05
handbook, halfpage
R
R
V
V
I
I
I
g
R
C
C
C
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF power LDMOS transistor
V
Fig.2
GS
(pF)
C
10
10
= 0; f = 1 MHz.
10
1
1
2
0
Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
C os
C rs
C is
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
10
PARAMETER
PARAMETER
20
V DS (V)
MGW642
30
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= 10 V; I
= 0; V
= 0; V
= 0; V
3
GSth
CONDITIONS
D
DS
DS
DS
DS
= 0.2 mA
+ 9 V; V
D
D
D
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 20 mA
= 0.75 A
= 0.75 A
DS
T
mb
= 0
DS
= 25 C; note 1
CONDITIONS
= 10 V
75
4
2.8
MIN.
0.5
1.2
13
11
0.5
TYP.
VALUE
Product specification
0.5
5
BLF2043F
5
1.5
40
MAX.
UNIT
K/W
K/W
V
V
A
nA
S
pF
pF
pF
UNIT
A