BLF2043F NXP Semiconductors, BLF2043F Datasheet - Page 4

• Manufacturer Part Number: BLF2043F
• Description: RF MOSFET Small Signal BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF2043F

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohmss
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Min)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF2043F,112

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2002 Mar 05
handbook, halfpage
CW, class-AB (2-tone)
MODE OF OPERATION
UHF power LDMOS transistor
V
f
Fig.3
1
DS
= 2000 MHz; f
(dB)
G p
= 26 V; I
15
10
5
0
0
Power gain and efficiency as functions of
peak envelope load power, typical values.
DQ
= 85 mA;
2
= 2000.1 MHz.
4
G p
DS
f
1
8
= 26 V; f = 2200 MHz at rated load power.
= 2200; f
P L (PEP) (W)
(MHz)
12
f
2
= 2200.1
D
MGW643
16
60
40
20
0
(%)
D
V
(V)
26
h
DS
= 25 C; R
4
handbook, halfpage
V
f
Fig.4
1
(mA)
DS
(dBc)
= 2000 MHz; f
I
d im
85
DQ
= 26 V; I
th mb-h
20
40
60
80
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
= 0.4 K/W; unless otherwise specified.
10 (PEP)
= 85 mA; T
2
(W)
P
= 2000.1 MHz.
L
4
h
25 C;
(dB)
>11
G
8
p
d 3
d 5
d 7
P L (PEP) (W)
Product specification
12
>30
(%)
BLF2043F
D
MGW644
16
(dBc)
d
im
26