BLF2043F NXP Semiconductors, BLF2043F Datasheet - Page 5

RF MOSFET Small Signal BULK TNS-RFPR

BLF2043F

Manufacturer Part Number
BLF2043F
Description
RF MOSFET Small Signal BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043F

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohmss
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
10W
Power Gain (typ)@vds
11(Min)@26VdB
Frequency (max)
2.2GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
13@26VpF
Output Capacitance (typ)@vds
11@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
30(Min)%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF2043F,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF2043F
Manufacturer:
ATMEL
Quantity:
310
Part Number:
BLF2043F
Manufacturer:
NXP
Quantity:
243
Part Number:
BLF2043F
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
2002 Mar 05
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.5
V
f
(1) I
Fig.7
1
1
DS
DS
(dBc)
= 2200 MHz; f
= 2200 MHz; f
(dB)
d 3
G p
= 26 V; I
= 26 V; T
20
40
60
DQ
15
10
0
5
0
0
0
= 115 mA.
Power gain and efficiency as functions of
peak envelope load power, typical values.
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
h
= 85 mA;
2
2
25 C;
= 2200.1 MHz.
= 2200.1 MHz.
4
4
(2) I
G p
DQ
= 55 mA.
(1)
(2)
(3)
8
8
P L (PEP) (W)
P L (PEP) (W)
(3) I
12
12
D
DQ
MGW645
MGW647
= 85 mA.
16
16
60
40
20
0
(%)
D
5
handbook, halfpage
V
f
Fig.6
1
DS
(dBc)
= 2200 MHz; f
d im
= 26 V; I
20
40
60
80
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
= 85 mA; T
2
= 2200.1 MHz.
4
h
25 C;
8
d 3
d 5
d 7
P L (PEP) (W)
Product specification
12
BLF2043F
MGW646
16

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