RF MOSFET Small Signal RF LDMOS 300W UHF

BLF872

Manufacturer Part NumberBLF872
DescriptionRF MOSFET Small Signal RF LDMOS 300W UHF
ManufacturerNXP Semiconductors
BLF872 datasheet
 


Specifications of BLF872

ConfigurationDual Common SourceTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.08 OhmsDrain-source Breakdown Voltage65 V
Gate-source Breakdown Voltage+/- 13 VMaximum Operating Temperature+ 200 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 65 C
Package / CaseLDMOST-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBLF872,112  
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BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-tone performance at 860 MHz, a drain-source voltage V
quiescent drain current I
Peak envelope power load power P
Gain G
Drain efficiency
Third order intermodulation distortion IMD3 = 28 dBc
Typical DVB performance at 858 MHz, a drain-source voltage V
quiescent drain current I
Average output power P
Gain G
Drain efficiency
Third order intermodulation distortion IMD3 = 28 dBc (4.3 MHz from center
frequency)
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
Designed for broadband operation (UHF band)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Source on underside eliminates DC isolators, reducing common-mode inductance
Easy power control
= 2
0.9 A:
Dq
L(PEP)
= 15 dB
p
= 43 %
D
= 2
0.9 A:
Dq
= 70 W
L(AV)
= 15 dB
p
= 30 %
D
Product data sheet
of 32 V and a
DS
= 300 W
of 32 V and a
DS

BLF872 Summary of contents

  • Page 1

    ... BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications ...

  • Page 2

    ... LDMOST ceramic package; 2 mounting holes; 4 leads Rev. 01 — 20 February 2006 UHF power LDMOS transistor = common-source narrowband 860 MHz L(PEP) L(AV) p (W) (W) (dB 300 - 15 [ Simplified outline 1 [1] 3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872 IMD3 D (%) (dBc [ Version SOT800 ...

  • Page 3

    ... Product data sheet Conditions Conditions [1] Conditions 250 GSth GSth MHz MHz MHz GS DS Rev. 01 — 20 February 2006 BLF872 UHF power LDMOS transistor Min Max Unit - +150 C - 200 C Typ Unit [1] 0.32 K/W [1] [2] 0.4 K/W Min Typ Max Unit 5 [2] - 200 - pF [ ...

  • Page 4

    ... L(PEP) (V) (A) ( 0.9 300 output sync Rev. 01 — 20 February 2006 UHF power LDMOS transistor 001aad743 ( L(AV (W) (dB) (%) - > 14 > > 14 > 26 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872 ; typical values IMD3 G p (dBc) (dB ...

  • Page 5

    ... P add add 100 150 860 MHz 860.1 MHz 0 drain efficiency p power added efficiency add average output power P ; typical values L(AV) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872 ; L 001aad746 add (%) 200 250 P (W) L(AV) and function ...

  • Page 6

    ... P (W) L(AV and third Fig 6. DVB-T (8K OFDM) power gain G p efficiency and as a function of average output power typical values LO ; typical L(AV) Rev. 01 — 20 February 2006 BLF872 UHF power LDMOS transistor 001aad747 G p add 120 P L(AV 858 MHz 0 drain p and power added efficiency D © ...

  • Page 7

    ... P o(sync)M power function of frequency f L(AV) 7.2 Ruggedness in class-AB operation The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. BLF872_1 Product data sheet ...

  • Page 8

    ... T = 160 170 180 C j (10 190 C j (11 200 C j Fig 9. BLF872 electromigration (I 8. Test information Table 8: List of components For test circuit, see Figure 10, 11 and 12. Component Description B1, B2 balun semi rigid coax C1 multilayer ceramic chip capacitor C2 multilayer ceramic chip capacitor ...

  • Page 9

    ... F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = BLF872_1 Product data sheet …continued and 12. Value 15 nF 470 0 4 100 5.6 5.6 100 100 Rev. 01 — 20 February 2006 BLF872 UHF power LDMOS transistor Remarks [3] [3] [3] [3] [3] [3] [ 13 17 16 ...

  • Page 10

    G1(test) C30 R5 R3 C28 C24 R1 C26 L12 L13 50 C25 B2 C23 L13 L12 C27 R2 C32 C29 R4 R6 C31 +V G2(test) Fig 10. Class-AB common-source broadband test circuit L10 L2 L11 ...

  • Page 11

    Fig 11. Printed-circuit board for class-AB broadband test circuit 95 mm 001aad753 ...

  • Page 12

    ... C30 +V G1(test C28 R1 B2 L13 L12 C26 C23 C24 C25 C32 C27 L12 10 mm L13 broadband R2 BLF872 input C29 C31 G2(test) Fig 12. Component layout for class-AB broadband test circuit 13.1 mm L10 L1 L2 L11 C20 C22 BLF872 C21 C2 L11 L2 1.5 mm L10 C10 ...

  • Page 13

    ... EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872 SOT800 0.25 0.25 0.05 0.01 0.01 0.002 ISSUE DATE 05-06-02 05-06- ...

  • Page 14

    ... Peak Envelope Power Radio Frequency Surface Mount Device Time To Failure Voltage Standing Wave Ratio Data sheet status Change notice Product data sheet - Rev. 01 — 20 February 2006 BLF872 UHF power LDMOS transistor Doc. number Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

  • Page 15

    ... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 20 February 2006 BLF872 UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

  • Page 16

    ... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands BLF872 Date of release: 20 February 2006 Document number: BLF872_1 ...