PD55003L

Manufacturer Part NumberPD55003L
DescriptionRF MOSFET Power N-Ch 40 Volt 2.5 Amp
ManufacturerSTMicroelectronics
PD55003L datasheets

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Specifications of PD55003L

Forward Transconductance Gfs (max / Min)1 SMinimum Operating Temperature- 65 C
Mounting StyleSMD/SMTProduct TypeRF MOSFET Power
Transistor PolarityN-ChannelConfigurationSingle Triple Drain Triple Gate
Drain-source Breakdown Voltage40 VGate-source Breakdown Voltage- 0.5 V to + 15 V
Continuous Drain Current2.5 APower Dissipation14 W
Maximum Operating Temperature+ 150 CPackage / CaseVFQFPN Power Flat 14
Channel TypeNChannel ModeEnhancement
Drain Source Voltage (max)40VOutput Power (max)3W
Power Gain (typ)@vds19dBFrequency (max)1GHz
Package TypePower FlatPin Count14
Forward Transconductance (typ)1SInput Capacitance (typ)@vds34@12.5VpF
Output Capacitance (typ)@vds23@12.5VpFReverse Capacitance (typ)1.8@12.5VpF
Operating Temp Range-65C to 150CDrain Efficiency (typ)52%
MountingSurface MountNumber Of Elements1
Power Dissipation (max)14000mWVswr (max)20(Min)
Screening LevelMilitaryLead Free Status / RoHS StatusLead free / RoHS Compliant
show all specifications
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N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
OUT
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55003L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L boasts the excellent gain,
linearity and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
PD55003L’s superior linearity performance makes
it an ideal solution for car mobile radio.
ABSOLUTE MAXIMUM RATINGS (T
Symbol
V
Drain-Source Voltage
(BR)DSS
V
Gate-Source Voltage
GS
I
Drain Current
D
P
Power Dissipation (@ Tc = 70°C)
DISS
Tj
Max. Operating Junction Temperature
T
Storage Temperature
STG
THERMAL DATA
R
Junction -Case Thermal Resistance
th(j-c)
June, 17 2003
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
ORDER CODE
PD55003L
°
= 25
C)
CASE
Parameter
PD55003L
™
PowerFLAT
(5x5)
BRANDING
55003
PIN CONNECTION
TOP VIEW
Value
Unit
40
V
-0.5 to +15
V
2.5
A
14
W
150
°C
-65 to +150
°C
5.7
°C/W
1/13

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PD55003L Summary of contents

  • Page 1

    ... Field-Effect RF power transistor designed for high gain, broadband commercial and industrial applications. It operates common source mode at frequencies GHz. PD55003L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. ...

  • Page 2

    ... PD55003L ELECTRICAL SPECIFICATION (T STATIC Symbol DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC Symbol 12 1dB 12 12 Load mismatch ALL PHASE ANGLES Typical Input Typical Drain Impedance Load Impedance G Zin S ESD PROTECTION CHARACTERISTICS Human Body Model Machine Model MOISTURE SENSITIVITY LEVEL J-STD-020B 2/13 ° ...

  • Page 3

    ... Output Power Vs Bias Current Vds = 12 500 MHz 0 3.5 4.0 4.5 5.0 0 PD55003L Idq = 70 mA Idq = 50 mA Vds = 12 500 MHz 100 Pin (mW) Idq = 50 mA Idq = 70 mA Vds = 12 500 MHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ...

  • Page 4

    ... PD55003L TYPICAL PERFORMANCE Efficiency Vs Bias Current 100 150 200 250 300 Idq (mA) Output Power Vs Gate-Source Voltage 0.0 0.5 1.0 1.5 2.0 2.5 Vgs (V) 4/13 Output Power Vs Supply Voltage Pin = 20 dBm f = 500 MHz 1 Vdd = 12 350 400 450 500 5 6 Pin = 20 dBm Vdd = 12 500 MHz 3 ...

  • Page 5

    ... TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency 480 490 (MHz ) Return Loss Vs Frequency 0 -5 -10 -15 -20 -25 - 480 490 50 0 510 f (MHz ) Efficiency Vs Frequency Vds = Idq = out = 530 540 47 0 Vds = 12 out = 540 PD55003L Vds = 12.5 V Idq = (MHz ) 5 40 5/13 ...

  • Page 6

    ... PD55003L TEST CIRCUIT SCHEMATIC VGG TEST CIRCUIT COMPONENT PART LIST COMPONENT B1,B2 FERRITE BEAD C1,C12, 300pF, 100B ATC CHIP CAPACITOR C2,C3 15pF 100B ATC CHIP CAPACITOR C4 -:- 20 pF VARIABLE CAPACITOR JOHANSON C5, C13 120pF 100B ATC CHIP CAPACITOR C6, C14 0.1 mF 100B ATC CHIP CAPACITOR ...

  • Page 7

    ... TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6.4 inches PD55003L 7/13 ...

  • Page 8

    ... PD55003L S-PARAMETER (PD55003L 12. 0.15A FREQ 11 11 (MHz) 50 0.808 -110 100 0.772 -141 150 0.771 -152 200 0.779 -157 250 0.794 -161 300 0.809 -163 350 0.824 -165 400 0.839 -166 450 0.853 -168 500 0.865 -169 550 0.874 -171 600 0.885 ...

  • Page 9

    ... S-PARAMETER (PD55003L 12. 0.8A FREQ 11 (MHz) 50 0.841 100 0.800 150 0.800 200 0.803 250 0.812 300 0.822 350 0.830 400 0.837 450 0.848 500 0.857 550 0.866 600 0.874 650 0.882 700 0.887 750 0.893 800 0.898 850 0.903 900 0.904 950 ...

  • Page 10

    ... PD55003L S-PARAMETER (PD55003L 12. 1.5A FREQ (MHz) 50 0.837 100 0.799 150 0.801 200 0.809 250 0.823 300 0.835 350 0.845 400 0.855 450 0.866 500 0.876 550 0.882 600 0.892 650 0.898 700 0.903 750 0.907 800 0.909 850 0.912 900 0.915 950 0 ...

  • Page 11

    ... PowerFLAT MIN. Ao 5.15 Bo 5.15 Ko 1.0 ™ TAPE & REEL DIMENSIONS mm TYP. 5.25 5.25 1.1 PD55003L MAX 5.35 5.35 1.2 11/13 ...

  • Page 12

    ... PD55003L DIM. MIN 0.15 b 0. 12/13 ™ PowerFLAT MECHANICAL DATA mm TYP. MAX 0.90 1.00 0.02 0.05 0.24 0.25 0.35 0.51 0.58 0.71 0.79 5.00 0.30 5.00 2.57 2.64 1.27 3.37 0.74 0.21 Inch MIN. TYP. MAX 0.035 0.039 0.001 0.002 ...

  • Page 13

    ... All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com PD55003L 13/13 ...

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