STPS40L45CT STMicroelectronics, STPS40L45CT Datasheet

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STPS40L45CT

Manufacturer Part Number
STPS40L45CT
Description
DIODE SCHOTTKY 45V 20A TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS40L45CT

Voltage - Forward (vf) (max) @ If
530mV @ 20A
Current - Reverse Leakage @ Vr
600µA @ 45V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-7567-5
STPS40L45CT

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MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB, TO-247 and D
these devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed: 4A
Symbol
I
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2 x 20 A
150 °C
0.49 V
45 V
Parameter
2
PAK
Tc = 130°C
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS40L45CG/CT/CW
STPS40L45CT
TO-220AB
Per diode
Per device
A1
A2
STPS40L45CG
A1
K
K
A2
D
2
PAK
- 65 to + 150
A1
STPS40L45CW
10000
Value
8100
230
150
A2
45
30
20
40
2
3
TO-247
K
A1
V/µs
Unit
K
°C
W
V
A
A
A
A
A
C
A2
1/6

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STPS40L45CT Summary of contents

Page 1

... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed: 4A STPS40L45CG/CT/ 150 °C 0. PAK TO-220AB STPS40L45CT Parameter Tc = 130° Sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25° PAK STPS40L45CG A2 K ...

Page 2

... STPS40L45CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage F drop Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Tc=75°C = 0.1 0.2 Tc=125°C Single pulse 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 STPS40L45CT/ (25°C) T (° 100 tp(s) 1E-3 1E-2 1E-1 VR(V) 10 125 150 T tp =tp/T 1E+0 F=1MHz Tj=25° ...

Page 4

... STPS40L45CT/CW Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 1000 100 Typical values Tj=150°C Tj=125°C 10 Tj=75°C Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 PACKAGE MECHANICAL DATA TO-220AB H2 Dia COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55M.N MAXIMUM TORQUE VALUE : 0 ...

Page 5

PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm COOLING METHOD : BY CONDUCTION (METHOD C) FOOT PRINT (in millimeters PAK 16.90 10.30 8.90 A REF. ...

Page 6

... MAXIMUM TORQUE VALUE : 1.0M.N Ordering type Marking STPS40L45CG STPS40L45CG STPS40L45CT STPS40L45CT STPS40L45CW STPS40L45CW EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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