STPS20170CT STMicroelectronics, STPS20170CT Datasheet - Page 4

• Manufacturer Part Number: STPS20170CT
• Description: DIODE SCHOTTKY 170V 10A TO220AB
• Manufacturer: STMicroelectronics

Specifications of STPS20170CT

• Voltage - Forward (vf) (max) @ If: 900mV @ 10A
• Current - Reverse Leakage @ Vr: 15µA @ 170V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-3525-5

STPS20170C
Figure
impedance junction to case versus pulse
duration
Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D
4/8
1000
80
70
60
50
40
30
20
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
0
10
1.E-03
0
R
C(pF)
1
Z
th(j-a)
Single pulse
th(j-c)
(TO-220AB, I PAK and D PAK)
(°C/W)
5
/R
7:
th(j-c)
2
10
Relative
1.E-02
10
2
15
(TO-220FPAB)
S(cm²)
V (V)
t (s)
p
R
20
variation
25
1.E-01
100
2
30
of
δ
PAK)
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
thermal
35
RMS
tp
1.E+00
1000
40
Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 10: Forward voltage drop versus
forward current (per diode)
100.0
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
10.0
1.0
0.1
0.0
I
FM
0
I (µA)
R
(A)
0.2
(typical values)
25
T =125°C
j
0.4
(maximum values)
50
T =125°C
0.6
j
75
0.8
V
FM
T =125°C
T =175°C
T =150°C
T =100°C
T =25°C
j
j
j
j
j
(V)
1.0
100
V (V)
(maximum values)
R
T =25°C
j
1.2
125
1.4
150
1.6
175
1.8