DIODE ULTRA FAST 175V SOT-23

MMBD1405A

Manufacturer Part NumberMMBD1405A
DescriptionDIODE ULTRA FAST 175V SOT-23
ManufacturerFairchild Semiconductor
MMBD1405A datasheet
Product Change Notification
 


Specifications of MMBD1405A

Voltage - Forward (vf) (max) @ If1.1V @ 200mACurrent - Reverse Leakage @ Vr100nA @ 175V
Current - Average Rectified (io) (per Diode)200mAVoltage - Dc Reverse (vr) (max)175V
Reverse Recovery Time (trr)50nsDiode TypeStandard
SpeedSmall Signal =< 200mA (Io), Any SpeedDiode Configuration1 Pair Common Anode
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
ProductUltra Fast Recovery RectifierConfigurationDual Common Anode
Reverse Voltage250 VForward Voltage Drop1.25 V @ 0.3 A
Recovery Time50 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir0.1 uA
Power Dissipation0.35 WMounting StyleSMD/SMT
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (62Kb)Embed
Next
MMBD1401A / 1403A / 1404A / 1405A
3
2
1
SOT-23
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings *
Symbol
W
Working Inverse Voltage
IV
I
Average Rectified Current
O
I
DC Forward Current
F
i
Recurrent Peak Forward Current
f
i
Non-repetitive Peak Forward Surge Current
f(surge)
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T
Storage Temperature Range
STG
T
Operating Junction Temperature
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
Power Dissipation
D
Derate above 25 C
R
Thermal Resistance, Junction to Ambient
JA
* Device mounted on glass epoxy PCB 1.6”
1.6”
©2004 Fairchild Semiconductor Corporation
3
A29
1
2
MARKING
MMBD1401A A29 MMBD1404A A33
MMBD1403A A32 MMBD1405A A34
T
= 25 C unless otherwise noted
A
Parameter
Parameter
0.06”; mounting pad for the collector lead min. 0.93 in 2
Connection Diagram
1401A
1403A
3
3
2
1
1
2NC
1404A
1405A
3
3
1
2
2
1
Value
Units
175
V
200
mA
600
mA
700
mA
1.0
A
2.0
A
-55 to +150
C
150
C
Max.
Units
MMBD1401A - 1405A*
350
mW
2.8
mW/ C
357
C/W
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1

MMBD1405A Summary of contents

  • Page 1

    ... Device mounted on glass epoxy PCB 1.6” 1.6” ©2004 Fairchild Semiconductor Corporation 3 A29 1 2 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 unless otherwise noted A Parameter Parameter 0.06”; mounting pad for the collector lead min. 0. Connection Diagram 1401A ...

  • Page 2

    ... V - REVERSE VOLTAGE (V) R GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature Figure 3. Reverse Current vs Reverse Voltage IR - 180 to 255V ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Test Conditions I = 100 120V ...

  • Page 3

    ... I - FORWARD CURRENT (mA) F Figure 7. Forward Voltage vs Ambient Temperature 10mA (- Rloop = 100 Ohms 20 1 1.5 2 Irr - REVERSE RECOVERY CURRENT (mA) Figure 9. Reverse Recovery Time vs Reverse Recovery Current (Irr) ©2004 Fairchild Semiconductor Corporation (Continued) 1.4 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0 Figure 6 ...

  • Page 4

    ... Typical Characteristics ©2004 Fairchild Semiconductor Corporation (Continued) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 100 150 I - AVERAGE TEMPERATURE ( C) O Figure 11. Power Derating Curve 200 o MMBD1401A / 1403A / 1404A / 1405A, Rev. A1 ...

  • Page 5

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...