BAT54CWT1G Fairchild Semiconductor, BAT54CWT1G Datasheet
BAT54CWT1G
Manufacturer Part Number
BAT54CWT1G
Description
DIODE SCHOTTKY 30V SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAT54CWT1G.pdf
(3 pages)
Specifications of BAT54CWT1G
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Common Cathode
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54CWT1GFS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAT54CWT1G
Manufacturer:
ON Semiconductor
Quantity:
39 918
Company:
Part Number:
BAT54CWT1G
Manufacturer:
ON Semiconductor
Quantity:
1 850
Part Number:
BAT54CWT1G
Manufacturer:
ON/安森美
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
BAT54SWT1G/BAT54CWT1G Rev. A
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
Symbol
Symbol
θJA
Symbol
T
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
SOT-323
Pulse Width = 1.0 second
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
BAT54SWT1G = YB
BAT54CWT1G = YC
1
I
I
I
I
I
I
V
V
I
R
MARKING
R
F
F
F
F
F
F
R
R
L
3
= 0.1mA
= 1mA
= 10mA
= 30mA
= 100mA
= I
= 10µA
= 100Ω
= 25V
= 1V, f = 1.0MHz
R
= 10mA, I
2
1
Conditions
RR
= 1.0mA,
BAT54SWT1G
-65 to +125
-65 to +125
Value
Value
Connection Diagram
1
200
600
232
430
30
3
Min.
2
30
1
Max.
BAT54CWT1G
240
320
400
500
0.8
5.0
10
2
3
www.fairchildsemi.com
2
Unit
Unit
°C/W
mW
mA
mA
°C
°C
April 2005
V
Units
mV
mV
mV
mV
µA
pF
ns
V
V
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BAT54CWT1G Summary of contents
Page 1
... Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAT54SWT1G/BAT54CWT1G Rev MARKING BAT54SWT1G = YB BAT54CWT1G = 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 10µ 0.1mA 1mA 10mA ...
Page 2
... Typical Performance Characteristics Figure 1. Forward Voltage vs Temperature 0.1 125 ° C 0.01 100 C ° 1E-3 75 ° C 1E-4 25 ° C 1E-5 1E-6 0.2 0.4 Forward Voltage Drop, V Figure 3. Capacitance vs Reverse Bias Voltage BAT54SWT1G/BAT54CWT1G Rev. A Figure 2. Reverse Leakage Current 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 0.6 0 ...
Page 3
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAT54SWT1G/BAT54CWT1G Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...