U30DCT-E3/4W Vishay, U30DCT-E3/4W Datasheet

U30DCT-E3/4W

Manufacturer Part Number

U30DCT-E3/4W

Description

DIODE 30A 200V 25NS DUAL TO220-3

Manufacturer

Vishay

Datasheets

1.UF10BCT-E34W.pdf (5 pages)

2.UB30BCT-E34W.pdf (5 pages)

Specifications of U30DCT-E3/4W

Voltage - Forward (vf) (max) @ If

1.05V @ 15A

Current - Reverse Leakage @ Vr

20µA @ 200V

Current - Average Rectified (io) (per Diode)

15A

Voltage - Dc Reverse (vr) (max)

200V

Reverse Recovery Time (trr)

45ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Product

Ultra Fast Recovery Rectifier

Configuration

Dual Common Cathode

Reverse Voltage

200 V

Forward Voltage Drop

1.05 V at 15 A

Recovery Time

45 ns

Forward Continuous Current

30 A

Max Surge Current

160 A

Reverse Current Ir

20 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 5
Download datasheet (144Kb)

Document Number: 88967

Revision: 13-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Max. average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Electrostatic discharge capacitor voltage,

human body model: C = 150 pF, R = 1.5 kΩ (contact mode)

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min per diode

Operating junction and storage temperature range

PIN 1

PIN 3

TO-220AB

U10xCT

F(AV)

FSM

RRM

max.

PIN 2

CASE

PIN 1

PIN 2

Dual Common-Cathode Ultrafast Rectifier

TO-263AB

UB10xCT

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

HEATSINK

= 25 °C unless otherwise noted)

100 V, 150 V, 200 V

PIN 1

PIN 3

5 A x 2

150 °C

0.89 V

ITO-220AB

25 ns

UF10xCT

55 A

total device

per diode

PIN 2

SYMBOL

F(AV)

, T

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB and TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Oxide planar chip junction

• Ultrafast recovery time

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)

• Component in accordance to RoHS 2002/95/EC

U(F,B)10BCT thru U(F,B)10DCT

peak of 245 °C (for TO-263AB package)

and WEEE 2002/96/EC

U(F,B)10BCT

100

Vishay General Semiconductor

U(F,B)10CCT

- 55 to + 150

1500

150

U(F,B)10DCT

200

www.vishay.com

UNIT

°C

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U30DCT-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88967 For technical questions within your region, please contact one of the following: Revision: 13-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com U(F,B)10BCT thru U(F,B)10DCT FEATURES ITO-220AB • Oxide planar chip junction • ...

Page 2

... U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage per diode (2) Maximum reverse current per diode Maximum reverse recovery time per diode Maximum stored charge per diode Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ ...

Page 3

... Number of Cycles Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Document Number: 88967 For technical questions within your region, please contact one of the following: Revision: 13-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com U(F,B)10BCT thru U(F,B)10DCT 100 U(B)10xCT 10 0.1 125 150 Figure 4. Typical Instantaneous Forward Characteristics Per Diode ...

Page 4

... U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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