VF20100C-E3/4W Vishay, VF20100C-E3/4W Datasheet

VF20100C-E3/4W

Manufacturer Part Number

VF20100C-E3/4W

Description

DIODE 20A 100V SCHOTTKY TO220-3

Manufacturer

Vishay

Datasheet

1.VF20100C-E34W.pdf (5 pages)

Specifications of VF20100C-E3/4W

Voltage - Forward (vf) (max) @ If

790mV @ 10A

Current - Reverse Leakage @ Vr

800µA @ 100V

Current - Average Rectified (io) (per Diode)

10A

Voltage - Dc Reverse (vr) (max)

100V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads, Isolated), ITO-220AB

Product

Schottky Rectifiers

Peak Reverse Voltage

100 V

Forward Continuous Current

20 A

Max Surge Current

150 A

Configuration

Dual Common Cathode

Forward Voltage Drop

0.5 V at 5 A

Maximum Reverse Leakage Current

12 mA at 100 V

Operating Temperature Range

- 40 C to + 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

VF20100C-E3/4W

Quantity:

70 000

Current page: 1 of 5
Download datasheet (163Kb)

Document Number: 88977

Revision: 19-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

PIN 1

PIN 2

PIN 1

PIN 3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

TO-220AB

TO-263AB

V20100C

VB20100C

at I

F(AV)

FSM

RRM

max.

= 10 A

HEATSINK

CASE

PIN 2

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

PIN 1

PIN 3

PIN 1

PIN 3

TO-262AA

ITO-220AB

VF20100C

VI20100C

2 x 10 A

Ultra Low V

150 °C

0.58 V

100 V

150 A

V20100C, VF20100C, VB20100C & VI20100C

per device

per diode

PIN 2

= 0.50 V at I

SYMBOL

F(AV)

, T

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

• Component in accordance to RoHS 2002/95/EC

losses

peak of 245 °C (for TO-263AB package)

and TO-262AA package)

and WEEE 2002/96/EC

V20100C

TO-220AB,

= 5 A

Vishay General Semiconductor

VF20100C

- 40 to + 150

1500

100

150

ITO-220AB,

VB20100C

VI20100C

TO-263AB

www.vishay.com

UNIT

°C

and

Related parts for VF20100C-E3/4W

VF20100C-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88977 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com V20100C, VF20100C, VB20100C & VI20100C Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20100C-E3/4W ITO-220AB VF20100C-E3/4W TO-263AB VB20100C-E3/4W TO-263AB VB20100C-E3/8W TO-262AA VI20100C-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted) A ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 88977 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com V20100C, VF20100C, VB20100C & VI20100C 10 1.2 1.4 1.6 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... V20100C, VF20100C, VB20100C & VI20100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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