MBRF10H100CTHE3/45 Vishay, MBRF10H100CTHE3/45 Datasheet

DIODE SCHOT 10A 100V DUAL TO220

MBRF10H100CTHE3/45

Manufacturer Part Number
MBRF10H100CTHE3/45
Description
DIODE SCHOT 10A 100V DUAL TO220
Manufacturer
Vishay
Datasheet

Specifications of MBRF10H100CTHE3/45

Voltage - Forward (vf) (max) @ If
760mV @ 5A
Current - Reverse Leakage @ Vr
3.5µA @ 100V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, ITO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.85 V
Maximum Reverse Leakage Current
3.5 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88668
Revision: 08-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
MBR10H90CT
MBR10H100CT
PIN 1
PIN 3
TO-220AB
Dual Common-Cathode High-Voltage Schottky Rectifier
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
PIN 2
CASE
1
K
MBRB10H90CT
MBRB10H100CT
PIN 2
PIN 1
TO-263AB
2
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
3
For technical questions within your region, please contact one of the following:
R
)
C
1
= 25 °C unless otherwise noted)
HEATSINK
2
K
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 3
90 V, 100 V
ITO-220AB
p
5 A x 2
175 °C
0.61 V
3.5 µA
150 A
= 2 µs, 1 kHz
C
= 105 °C
MBR(F,B)10H90CT & MBR(F,B)10H100CT
PIN 2
1
2
3
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder Dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
SYMBOL
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
T
V
J
V
dV/dt
I
I
I
V
F(AV)
, T
V
RRM
RWM
FSM
RRM
DC
AC
STG
supplies,
Vishay General Semiconductor
MBR10H90CT
90
90
90
freewheeling
- 65 to + 175
10 000
1500
150
5.0
0.5
10
MBR10H100CT
100
100
100
diodes,
www.vishay.com
dc-to-dc
UNIT
V/µs
°C
V
V
V
A
A
A
V
1

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MBRF10H100CTHE3/45 Summary of contents

Page 1

... Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink min Document Number: 88668 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H90CT & MBR(F,B)10H100CT FEATURES ITO-220AB • Guardring for overvoltage protection • ...

Page 2

... Typical thermal resistance per diode , ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB MBR10H100CT-E3/45 ITO-220AB MBRF10H100CT-E3/45 TO-263AB MBRB10H100CT-E3/45 TO-263AB MBRB10H100CT-E3/81 TO-220AB MBR10H100CTHE3/45 ITO-220AB MBRF10H100CTHE3/45 TO-263AB MBRB10H100CTHE3/45 TO-263AB MBRB10H100CTHE3/81 Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 88668 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H90CT & MBR(F,B)10H100CT 100 10 1 0.1 0.9 1.1 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... MBR(F,B)10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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