DIODE SCHTKY DL 120V 15A TO220-3

 

VF30120C-E3/4W

Manufacturer Part NumberVF30120C-E3/4W
DescriptionDIODE SCHTKY DL 120V 15A TO220-3
ManufacturerVishay
VF30120C-E3/4W datasheets

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Specifications of VF30120C-E3/4W

Voltage - Forward (vf) (max) @ If970mV @ 15ACurrent - Reverse Leakage @ Vr800µA @ 120V
Current - Average Rectified (io) (per Diode)15AVoltage - Dc Reverse (vr) (max)120V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Common CathodeMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads, Isolated), ITO-220ABProductSchottky Rectifiers
Peak Reverse Voltage120 VForward Continuous Current30 A
Max Surge Current150 AConfigurationDual High Voltage
Forward Voltage Drop0.5 V to 0.97 VMaximum Reverse Leakage Current17 mA
Operating Temperature Range- 40 C to + 150 CMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS CompliantReverse Recovery Time (trr)-
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
®
TMBS
TO-220AB
3
2
1
V30120C
PIN 1
PIN 1
PIN 2
CASE
PIN 3
PIN 3
TO-263AB
K
K
2
1
VB30120C
PIN 1
K
PIN 1
PIN 2
HEATSINK
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
at I
= 15 A
F
F
T
max.
J
MAXIMUM RATINGS (T
= 25 °C unless otherwise noted)
A
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
= 25 °C, L = 60 mH per diode
J
Peak repetitive reverse current at t
= 2 µs, 1 kHz,
p
T
= 38 °C ± 2 °C per diode
J
Voltage rate of change (rated V
)
R
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Document Number: 89041
For technical questions within your region, please contact one of the following:
Revision: 24-Jun-09
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
New Product
V30120C, VF30120C, VB30120C & VI30120C
Ultra Low V
= 0.50 V at I
F
F
FEATURES
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
3
2
1
• Solder bath temperature 275 °C maximum, 10 s,
VF30120C
per JESD 22-B106 (for TO-220AB, ITO-220AB and
PIN 2
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
3
2
1
MECHANICAL DATA
VI30120C
Case:
TO-220AB,
PIN 2
TO-262AA
K
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
2 x 15 A
Terminals: Matte tin plated leads, solderable per
120 V
J-STD-002 and JESD 22-B102
150 A
E3 suffix meets JESD 201 class 1A whisker test
0.68 V
Polarity: As marked
150 °C
Mounting Torque: 10 in-lbs maximum
SYMBOL
V30120C
V
RRM
per device
I
F(AV)
per diode
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
, T
J
STG
PDD-Europe@vishay.com
Vishay General Semiconductor
= 5 A
ITO-220AB,
TO-263AB
VF30120C
VB30120C
VI30120C
120
30
15
150
130
0.5
10 000
1500
- 40 to + 150
www.vishay.com
and
UNIT
V
A
A
mJ
A
V/µs
V
°C
1

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VF30120C-E3/4W Summary of contents

  • Page 1

    ... Operating junction and storage temperature range Document Number: 89041 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V30120C, VF30120C, VB30120C & VI30120C Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

  • Page 2

    ... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V30120C-E3/4W ITO-220AB VF30120C-E3/4W TO-263AB VB30120C-E3/4W TO-263AB VB30120C-E3/8W TO-262AA VI30120C-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

  • Page 3

    ... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89041 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V30120C, VF30120C, VB30120C & VI30120C 10 1 1.2 1.4 1.6 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode ...

  • Page 4

    ... V30120C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

  • Page 5

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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