DIODE G-P DUAL 200V 225MA SOT-23

 

BAV23S,235

Manufacturer Part NumberBAV23S,235
DescriptionDIODE G-P DUAL 200V 225MA SOT-23
ManufacturerNXP Semiconductors
BAV23S,235 datasheets

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Specifications of BAV23S,235

Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Voltage - Forward (vf) (max) @ If1V @ 100mA
Current - Reverse Leakage @ Vr100nA @ 200VCurrent - Average Rectified (io) (per Diode)225mA (DC)
Voltage - Dc Reverse (vr) (max)200VReverse Recovery Time (trr)50ns
Diode TypeStandardSpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Series ConnectionMounting TypeSurface Mount
ProductSwitching DiodesPeak Reverse Voltage250 V
Forward Continuous Current0.225 AMax Surge Current9 A
ConfigurationDual SeriesRecovery Time50 ns
Forward Voltage Drop1.25 VMaximum Reverse Leakage Current100 uA
Operating Temperature Range+ 150 CMaximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names933947770235
BAV23S /T3
BAV23S /T3
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BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Type number
BAV23A
BAV23C
BAV23S
BAV23
1.2 Features and benefits
High switching speed: t
Low leakage current
Repetitive peak reverse voltage:
V
RRM
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
When switched from I
Product overview
Package
NXP
SOT23
SOT23
SOT23
SOT143B
 50 ns
rr
 250 V
Quick reference data
Parameter
Conditions
reverse current
V
R
reverse voltage
reverse recovery time
= 10 mA to I
= 10 mA; R
F
R
Product data sheet
Configuration
JEDEC
TO-236AB
dual common anode
TO-236AB
dual common cathode
TO-236AB
dual series
-
dual isolated
 2 pF
Low capacitance: C
d
Small SMD plastic package
Min
Typ
= 200 V
-
-
-
-
[1]
-
-
= 100 ; measured at I
= 1 mA.
L
R
Max
Unit
100
nA
200
V
50
ns

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BAV23S,235 Summary of contents

  • Page 1

    BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Type number BAV23A BAV23C BAV23S BAV23 1.2 Features ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 3. Pin BAV23A BAV23C BAV23S BAV23 BAV23_SER_7 Product data sheet Pinning Description cathode (diode 1) cathode (diode 2) common anode anode (diode 1) anode (diode 2) common cathode anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) cathode (diode 1) cathode (diode 2) anode (diode 2) anode (diode 1) All information provided in this document is subject to legal disclaimers ...

  • Page 3

    ... NXP Semiconductors 3. Ordering information Table 4. Type number BAV23A BAV23C BAV23S BAV23 4. Marking Table 5. Type number BAV23A BAV23C BAV23S BAV23 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

  • Page 4

    ... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device P tot amb T stg [1] Single diode loaded. [2] Double diode loaded C prior to surge. [ [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. ...

  • Page 5

    ... NXP Semiconductors 600 I F (mA) 400 200 ( 0.4 0.8 = 150 C (1) T amb = 85 C (2) T amb = 25 C (3) T amb = 40 C (4) T amb Fig 1. Forward current as a function of forward voltage; typical values = 150 C (1) T amb = 85 C (2) T amb = 25 C (3) T amb =  ...

  • Page 6

    ... NXP Semiconductors 1 (pF) 0.8 0.6 0.4 0  MHz; T amb Fig 4. Diode capacitance as a function of reverse voltage; typical values 8. Test information D.U. Ω × ( Fig 6. Reverse recovery time test circuit and waveforms BAV23_SER_7 Product data sheet mbg447 300 I F (mA) 200 100 (V) R FR4 PCB, standard footprint (1) Single diode loaded ...

  • Page 7

    ... NXP Semiconductors 9. Package outline 3.0 2.8 3 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Fig 7. Package outline SOT23 (TO-236AB) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number BAV23A BAV23C BAV23S BAV23 [1] For further information and the availability of packing methods, see ...

  • Page 8

    ... NXP Semiconductors 11. Soldering 3 1.7 Fig 9. 2.6 4.6 Fig 10. Wave soldering footprint SOT23 (TO-236AB) BAV23_SER_7 Product data sheet 3.3 2.9 1.9 0.7 (3×) 0.5 (3×) 0.6 (3×) 1 Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) 1.4 2.8 4.5 All information provided in this document is subject to legal disclaimers. ...

  • Page 9

    ... NXP Semiconductors 0.7 (3×) 0.7 Fig 11. Reflow soldering footprint SOT143B 4.6 Fig 12. Wave soldering footprint SOT143B BAV23_SER_7 Product data sheet 3.25 0.6 (3×) 0.5 (3×) 1.9 0.6 (3×) 0.6 0.75 0.95 0.9 1 4.45 2.2 2.575 1.2 All information provided in this document is subject to legal disclaimers. ...

  • Page 10

    ... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date BAV23_SER_7 20100319 • Modifications: Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted • Type numbers BAV23A and BAV23C added • Table 5 “Marking • Figure • Figure • Section 13 “Legal BAV23_SER_6 20080303 ...

  • Page 11

    ... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

  • Page 12

    ... NXP Semiconductors 14. Contact information For more information, please visit: For sales office addresses, please send an email to: BAV23_SER_7 Product data sheet http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 07 — 19 March 2010 BAV23 series Dual high-voltage switching diodes © ...

  • Page 13

    ... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Packing information . . . . . . . . . . . . . . . . . . . . . 7 11 Soldering ...

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