BAT120C,115 NXP Semiconductors, BAT120C,115 Datasheet

DIODE SCHOTTKY 25V 1A SOT223

BAT120C,115

Manufacturer Part Number
BAT120C,115
Description
DIODE SCHOTTKY 25V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BAT120A115.pdf (7 pages)

Specifications of BAT120C,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Voltage - Forward (vf) (max) @ If
450mV @ 1A
Current - Reverse Leakage @ Vr
1mA @ 25V
Current - Average Rectified (io) (per Diode)
1A (DC)
Voltage - Dc Reverse (vr) (max)
25V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
25 V
Forward Continuous Current
1 A
Max Surge Current
10 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.45 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934051350115
BAT120C T/R
BAT120C T/R
Product data sheet
Supersedes data of 2001 Aug 27
DATA SHEET
BAT120 series
Schottky barrier double diodes
k, halfpage
DISCRETE SEMICONDUCTORS
M3D087
2003 Aug 04

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BAT120C,115 Summary of contents

Page 1

DATA SHEET k, halfpage BAT120 series Schottky barrier double diodes Product data sheet Supersedes data of 2001 Aug 27 DISCRETE SEMICONDUCTORS M3D087 2003 Aug 04 ...

Page 2

... NXP Semiconductors Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. ...

Page 3

... NXP Semiconductors Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode V continuous reverse voltage R I continuous forward current F I non-repetitive peak forward current FSM I non-repetitive peak reverse current RSM T storage temperature ...

Page 4

... NXP Semiconductors Schottky barrier double diodes GRAPHICAL DATA handbook, halfpage (mA (1) ( (3) ( 200 400 = 125 °C. (1) T (3) T amb = 100 °C. (2) T (4) T amb Fig.3 Forward current as a function of forward voltage; typical values handbook, halfpage C d (pF ° MHz; T amb Fig.5 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 2003 Aug scale 0.32 6 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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