STPS20L45CFP STMicroelectronics, STPS20L45CFP Datasheet - Page 4

• Manufacturer Part Number: STPS20L45CFP
• Description: DIODE SCHOTTKY 45V TO-220FPAB
• Manufacturer: STMicroelectronics

Specifications of STPS20L45CFP

• Voltage - Forward (vf) (max) @ If: 550mV @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
2E+2
1E+2
1E+0
100.0
1E+1
1E-2
1E-3
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
δ = 0.5
Single pulse
0
δ = 0.2
δ = 0.1
th(j-c)
I (mA)
I
R
FM
(A)
T =125°C
j
/R
0.2
5
th(j-c)
(typical values)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, D
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
T =150°C
j
10
0.4
1E-2
15
T =75°C
j
0.6
T =25°C
j
t (s)
20
V
p
T =150°C
T =125°C
T =25°C
V (V)
T =75°C
j
j
j
FM
j
R
0.8
(V)
25
1.0
1E-1
30
1.2
δ
=tp/T
35
T
1.4
2
40
PAK)
tp
1E+0
1.6
45
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
2000
1000
80
70
60
50
40
30
20
10
100
0
1E-3
0
R
Z
1
th(j-a)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
th(j-c)
C(pF)
(°C/W)
5
/R
th(j-c)
2
Relative variation of thermal
impedance junction to case versus
pulse duration ( TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35µm)( D
1E-2
10
15
S(Cu)(cm²)
2
5
PAK)
t (s)
1E-1
p
20
V (V)
R
10
25
1E+ 0
30
δ
STPS20L45C
=tp/T
20
V
T
OSC
F=1MHz
35
T =25°C
=30mV
j
tp
1E+ 1
RMS
50
40