STPS20H100CG-TR STMicroelectronics, STPS20H100CG-TR Datasheet - Page 4

DIODE SCHOTTKY 100V 10A D2PAK

STPS20H100CG-TR

Manufacturer Part Number
STPS20H100CG-TR
Description
DIODE SCHOTTKY 100V 10A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20H100CG-TR

Voltage - Forward (vf) (max) @ If
770mV @ 10A
Current - Reverse Leakage @ Vr
4.5µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
20 A
Max Surge Current
250 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.88 V
Maximum Reverse Leakage Current
4.5 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2457-2

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0
Characteristics
4/11
Figure 1.
Figure 3.
Figure 5.
8
6
4
2
0
200
180
160
140
120
100
0.001
80
60
40
20
0.01
0
0
1E-3
P
0.1
1
F(AV)
0.01
I (A)
M
P
P
I
M
ARM
ARM p
(W)
(1µs)
2
(t )
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220AB, D
δ = 0.05
1E-2
4
1
δ = 0.1
I
F(AV)
t (µs)
p
t(s)
6
2
(A)
PAK, I
δ = 0.2
10
1E-1
8
2
PAK)
δ = 0.5
100
δ
=tp/T
10
δ = 1
T
T =125°C
T =50°C
T =75°C
C
C
C
tp
1000
1E+0
12
Figure 2.
Figure 4.
Figure 6.
10
12
140
120
100
8
6
4
2
0
80
60
40
20
1.2
0.8
0.6
0.4
0.2
1E-3
0
0
I
1
0
F(AV)
I (A)
25
M
P
I
M
δ
ARM
P
=tp/T
ARM p
(A)
R
th(j-a)
25
(25°C)
δ
=0.5
(t )
T
t
=40°C/W
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220FPAB)
50
tp
R
th(j-a)
50
=15°C/W
1E-2
75
75
T
amb
T (°C)
j
t(s)
R
(°C)
th(j-a)
100
=R
100
th(j-c)
1E-1
125
TO-220FPAB
STPS20H100C
125
TO-220AB
150
T =125°C
T =50°C
T =75°C
j
j
j
150
1E+0
175

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