STPS16H100CG-TR STMicroelectronics, STPS16H100CG-TR Datasheet

DIODE SCHOTTKY 100V 8A D2PAK

STPS16H100CG-TR

Manufacturer Part Number
STPS16H100CG-TR
Description
DIODE SCHOTTKY 100V 8A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS16H100CG-TR

Voltage - Forward (vf) (max) @ If
770mV @ 8A
Current - Reverse Leakage @ Vr
3.6µA @ 100V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

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Part Number:
STPS16H100CG-TR
Manufacturer:
ST
0
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
* :
DESCRIPTION
Dual center tap Schottky rectifier designed for
high frequency miniature Switch Mode Power
Supplies such as adaptators and on board
DC/DC converters.
July 2003 - Ed: 2A
Symbol
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
I
V
F(RMS)
P
dV/dt
dPtot
I
I
I
I
F(AV)
T
RRM
RSM
dTj
FSM
RRM
ARM
Tj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Rth j
Repetitive peak reverse voltage
RMS forward current
Average forward
current = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
(
1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
a
)
thermal runaway condition for a diode on its own heatsink
2 x 8 A
175 °C
0.64 V
100 V
TO-220AB
D
TO-220FPAB
2
PAK / I
Parameter
STPS16H100CT/CG/CFP/CR
2
PAK
Tc = 165°C
Tc = 150°C
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
A2
A1
STPS16H100CFP
STPS16H100CT
TO-220FPAB
TO-220AB
Per diode
Per device
A1
A1
K
K
A2
A2
K
STPS16H100CR
STPS16H100CG
- 65 to + 175
K
10000
Value
8700
D
100
200
175
I
30
16
2
8
1
2
2
PAK
PAK
A1
A1
A2
K
Unit
V/µs
°C
A2
W
V
A
A
A
A
A
C
1/7

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STPS16H100CG-TR Summary of contents

Page 1

... TO-220AB STPS16H100CT TO-220FPAB STPS16H100CFP Parameter TO-220AB Tc = 165° PAK / I PAK TO-220FPAB Tc = 150° sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25° PAK STPS16H100CG PAK STPS16H100CR Value Unit 100 30 Per diode 8 Per device 16 200 1 2 8700 175 °C 175 10000 V/µ ...

Page 2

STPS16H100CT/CG/CFP/CR THERMAL RESISTANCES Symbol R Junction to ambient th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage ...

Page 3

Fig. 3: Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (TO-220AB, ...

Page 4

STPS16H100CT/CG/CFP/CR Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). I (mA) R 1.E+01 T =150°C j 1.E+00 T =125° =100°C j 1.E-01 T =75°C j 1.E-02 T =50°C j 1.E-03 T =25°C j 1.E-04 0 ...

Page 5

PACKAGE MECHANICAL DATA TO-220FPAB PACKAGE MECHANICAL DATA 2 I PAK REF Dia ...

Page 6

STPS16H100CT/CG/CFP/CR PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 8.90 6/7 REF ...

Page 7

... STPS16H100CT STPS16H100CT STPS16H100CFP STPS16H100CFP STPS16H100CG STPS16H100CG STPS16H100CG-TR STPS16H100CG STPS16H100CR STPS16H100CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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