STPS15L45CB STMicroelectronics, STPS15L45CB Datasheet
STPS15L45CB
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STPS15L45CB Summary of contents
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... Rth July 2003 - 7 150 °C 0.46 V inverters, Parameter Tc = 140° sinusoidal tp=2 µs square F=1kHz tp = 1µ 25°C STPS15L45CB DPAK Value Unit 45 10 7.5 Per diode 15 Per device 75 1 3700 - 175 ...
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... STPS15L45CB THERMAL RESISTANCES Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... C(nF) 10.0 1.0 0 Fig. 10: Thermal resistance junction to ambient ver- sus copper surface under tab (epoxy printed board FR4 35µm). Rth(j-a)(°C/W) 100 1.2 1.4 1.6 1.8 0 STPS15L45CB tp(s) 1.E-02 1.E-01 VR(V) 10 S(cm² =tp/T tp 1.E+00 F=1MHz Vosc=30mV Tj=25°C 100 3/4 ...
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... Ordering type Marking STPS15L45CB S15L45C STPS15L45CB-TR S15L45C EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...