STPS10H100CG STMicroelectronics, STPS10H100CG Datasheet

DIODE SCHOTTKY 100V 5A D2PAK

STPS10H100CG

Manufacturer Part Number
STPS10H100CG
Description
DIODE SCHOTTKY 100V 5A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS10H100CG

Voltage - Forward (vf) (max) @ If
730mV @ 5A
Current - Reverse Leakage @ Vr
3.5µA @ 100V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-4816-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS10H100CG
Manufacturer:
ST
0
Part Number:
STPS10H100CG
Manufacturer:
ST
Quantity:
20 000
Part Number:
STPS10H100CG
Manufacturer:
ST
Quantity:
18 482
Part Number:
STPS10H100CG-1
Manufacturer:
ST
0
Part Number:
STPS10H100CG-TR
Manufacturer:
ST
0
Part Number:
STPS10H100CG-TR
Manufacturer:
ST
Quantity:
4 784
FEATURES AND BENEFITS
DESCRIPTION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D
ABSOLUTE RATINGS (limiting values, per diode)
* :
MAIN PRODUCT CHARACTERISTICS
July 2003 - Ed: 3F
Symbol
I
HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT
LOW
TEMPERATURE
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
RRM
dPtot
FSM
RRM
ARM
Tj
dTj
stg
V
F
V
I
LEAKAGE
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
(max)
®
RRM
Tj
Rth j
2
(
PAK and I
1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
a
)
CURRENT
thermal runaway condition for a diode on its own heatsink
2
PAK.
TO-220AB
D
TO-220FPAB
2 x 5 A
175°C
0.61 V
100 V
2
PAK / I
AT
Parameter
2
PAK
HIGH
STPS10H100CT/CG/CR/CFP
Tc = 165°C
Tc = 160°C
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
STPS10H100CT
STPS10H100CG
TO-220AB
K
D
2
PAK
per diode
per device
A1
A1
A2
A1
A2
K
A2
K
STPS10H100CR
STPS10H100CFP
- 65 to + 175
TO-220FPAB
10000
Value
7200
K
100
180
175
I
10
10
2
5
1
PAK
A1
K
A1
A2
Unit
V/µs
K
°C
W
V
A
A
A
A
C
A2
1/7

Related parts for STPS10H100CG

STPS10H100CG Summary of contents

Page 1

... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed: 3F STPS10H100CT/CG/CR/CFP 100 V 175°C 0. HIGH STPS10H100CG TO-220AB STPS10H100CT Parameter TO-220AB Tc = 165° PAK / I PAK TO-220FPAB Tc = 160° sinusoidal µs square F = 1kHz tp = 1µ 25° ...

Page 2

STPS10H100CT/CG/CR/CFP THERMAL RESISTANCES Symbol R Junction to case th (j- (c) R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ...

Page 3

Fig. 3: Normalized avalanche power derating ver- sus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration ...

Page 4

STPS10H100CT/CG/CR/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 1E+4 Tj=150°C 1E+3 Tj=125°C 1E+2 Tj=100°C 1E+1 1E+0 Tj=25°C 1E-1 VR(V) 1E Fig. 9: Forward voltage drop versus forward ...

Page 5

STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOT PRINT in millimeters 16.90 10.30 3.70 8.90 REF ...

Page 6

PACKAGE MECHANICAL DATA 2 I PAK PACKAGE MECHANICAL DATA TO-220FPAB 6/7 REF ...

Page 7

... STPS10H100CFP STPS10H100CFP STPS10H100CG STPS10H100CG STPS10H100CG-TR STPS10H100CG STPS10H100CR STPS10H100CR Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

Related keywords