STPS20H100CG STMicroelectronics, STPS20H100CG Datasheet - Page 5

• Manufacturer Part Number: STPS20H100CG
• Description: DIODE SCHOTTKY 100V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20H100CG

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Rectifier Type: Schottky Diode
• Configuration: Dual Common Cathode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 20A
• Rev Curr: 4.5uA
• Peak Non-repetitive Surge Current (max): 250A
• Forward Voltage: 0.88V
• Operating Temp Range: -65C to 175C
• Package Type: D2PAK
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

STPS20H100C
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
1E+4
1E+3
1E+2
1E+0
100.0
1E+1
1E-2
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
0
I (µA)
th(j-c)
δ = 0.5
Single pulse
I
δ = 0.2
δ = 0.1
R
FM
(A)
10
/R
th(j-c)
(typical values)
0.2
T =150°C
T =125°C
T =100°C
T =25°C
j
j
j
j
T =125°C
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode,
TO-220AB, D
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
j
20
(typical values)
T =150°C
j
1E-2
30
0.4
40
V
t (s)
V (V)
p
FM
R
0.6
2
50
PAK, I
(V)
60
T =25°C
j
1E-1
T =125°C
0.8
2
j
PAK)
70
δ
=tp/T
80
1.0
T
90
tp
1E+0
100
1.2
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
1000
500
200
100
0
1E-2
0
R
Z
th(j-a)
1
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
C(pF)
(°C/W)
5
/R
th(j-c)
2
Relative variation of thermal
impedance junction to case versus
pulse duration
(per diode, TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (epoxy printed circuit
board FR4, Cu = 35 µm, D
10
1E-1
15
5
S(Cu)(cm²)
t (s)
p
V (V)
20
R
10
25
1E+0
20
Characteristics
30
δ
=tp/T
2
PAK)
V
OSC
50
F=1MHz
T
T =25°C
35
=30mV
j
tp
RMS
1E+1
5/11
100
40