STPS20H100CR STMicroelectronics, STPS20H100CR Datasheet - Page 4

• Manufacturer Part Number: STPS20H100CR
• Description: DIODE SCHOTTKY 100V 10A I2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20H100CR

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Characteristics
4/11
Figure 1.
Figure 3.
Figure 5.
8
6
4
2
0
200
180
160
140
120
100
0.001
80
60
40
20
0.01
0
0
1E-3
P
0.1
1
F(AV)
0.01
I (A)
M
P
P
I
M
ARM
ARM p
(W)
(1µs)
2
(t )
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220AB, D
δ = 0.05
1E-2
4
1
δ = 0.1
I
F(AV)
t (µs)
p
t(s)
6
2
(A)
PAK, I
δ = 0.2
10
1E-1
8
2
PAK)
δ = 0.5
100
δ
=tp/T
10
δ = 1
T
T =125°C
T =50°C
T =75°C
C
C
C
tp
1000
1E+0
12
Figure 2.
Figure 4.
Figure 6.
10
12
140
120
100
8
6
4
2
0
80
60
40
20
1.2
0.8
0.6
0.4
0.2
1E-3
0
0
I
1
0
F(AV)
I (A)
25
M
P
I
M
δ
ARM
P
=tp/T
ARM p
(A)
R
th(j-a)
25
(25°C)
δ
=0.5
(t )
T
t
=40°C/W
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220FPAB)
50
tp
R
th(j-a)
50
=15°C/W
1E-2
75
75
T
amb
T (°C)
j
t(s)
R
(°C)
th(j-a)
100
=R
100
th(j-c)
1E-1
125
TO-220FPAB
STPS20H100C
125
TO-220AB
150
T =125°C
T =50°C
T =75°C
j
j
j
150
1E+0
175