STPS2045CT STMicroelectronics, STPS2045CT Datasheet - Page 3

• Manufacturer Part Number: STPS2045CT
• Description: DIODE SCHOTTKY 45V 10A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS2045CT

• Voltage - Forward (vf) (max) @ If: 570mV @ 10A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 10 A
• Max Surge Current: 180 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V at 20 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7550-5; STPS2045CT

STPS2045C
Figure 1.
Figure 3.
Figure 5.
140
120
100
8
7
6
5
4
3
2
1
0
0.001
80
60
40
20
0.01
0
0
P
0.1
1E-3
F(AV)
1
0.01
I (A)
M
P
P
I
1
ARM
M
ARM p
(W)
(1µs)
(t )
2
δ
=0.5
t
0.1
Average forward power dissipation
vs average forward current
(per diode)
Normalized avalanche power
derating vs pulse duration
Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
δ = 0.05
3
1E-2
4
δ = 0.1
5
1
(TO-220AB, D PAK, I PAK)
I
F(AV)
t (µs)
p
t(s)
δ = 0.2
6
(A)
7
10
2
1E-1
8
δ = 0.5
9
2
100
δ
=tp/T
10
Doc ID 3506 Rev 6
δ = 1
T
T =100°C
T =75°C
T =125°C
11
C
C
C
tp
1000
1E+0
12
Figure 2.
Figure 4.
Figure 6.
12
10
100
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
80
60
40
20
0
1
0
1E-3
0
I
25
F(AV)
P
I (A)
M
ARM
P
δ
I
M
=tp/T
ARM
(A)
(25 °C)
25
(T j )
T
δ
=0.5
t
50
Average forward current vs ambient
temperature (
Normalized avalanche power
derating vs junction temperature
Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
tp
50
1E-2
75
R
T
75
th(j-a)
amb
T (°C)
t(s)
=15°C/W
j
(°C)
δ
= 0.5, per diode)
R
100
th(j-a)
100
=R
th(j-c)
1E-1
TO-220FPAB
Characteristics
125
(TO-220FPAB)
125
150
TO-220AB
D²PAK
T =75°C
T =100°C
T =125°C
C
C
C
1E+0
3/10
150
175