STPS20L45CG STMicroelectronics, STPS20L45CG Datasheet - Page 3

• Manufacturer Part Number: STPS20L45CG
• Description: DIODE SCHOTTKY 45V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20L45CG

• Voltage - Forward (vf) (max) @ If: 550mV @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 20 A
• Max Surge Current: 180 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.73 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2752-5

STPS20L45C
Figure 1.
Figure 3.
Figure 5.
8
7
6
5
4
3
2
1
0
140
120
100
0.001
80
60
40
20
0.01
0
0
P
0.1
1E-3
F(AV)
1
0.01
I (A)
P
M
P
I
M
ARM
ARM p
(W)
δ = 0.05
2
(1µs)
(t )
δ
=0.5
t
0.1
Average forward power
dissipation versus average forward
current (per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220AB, D
δ = 0.1
4
1E-2
δ = 0.2
1
6
I
F(AV)
t (µs)
p
t(s)
2
(A)
PAK)
8
δ = 0.5
10
1E-1
10
δ = 1
100
δ
=tp/T
12
T
T =125°C
T =25°C
T =75°C
C
C
C
tp
1000
1E+0
14
Figure 2.
Figure 4.
Figure 6.
12
10
100
11
9
8
7
6
5
4
3
2
0
90
80
70
60
50
40
30
20
10
1
1.2
0.8
0.6
0.4
0.2
0
1E-3
0
1
0
I
F(AV)
I (A)
25
M
P
I
M
ARM
δ
P
=tp/T
ARM p
(A)
(25°C)
δ
25
(t )
=0.5
t
T
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220FPAB)
50
δ
tp
= 0.5, per diode)
R
1E-2
th(j-a)
50
=15°C/W
75
T
amb
T (°C)
j
t(s)
75
(°C)
R
th(j-a)
100
=R
th(j-c)
1E-1
100
TO-220FPAB
Characteristics
125
TO-220AB / TO-247
125
T =100°C
T =25°C
T =50°C
C
j
C
150
1E+0
150
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