STPS3060CW STMicroelectronics, STPS3060CW Datasheet
STPS3060CW
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STPS3060CW Summary of contents
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... Rth October 2003 - Ed 150°C 0.75 V Parameter = 0 130° Sinusoidal tp=2 s F=1kHz tp = 100µs STPS3060CW TO-247 STPS3060CW Value Unit 60 30 Per diode 15 Per diode 30 Per device 200 Per diode 1 Per diode 1 Per diode - 150 150 1000 °C ° ...
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... STPS3060CW THERMAL RESISTANCES Symbol R Junction to case th(j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test 5ms, < 2% **tp = 380µs, < evaluate the maximum conduction losses use the following equation : ...
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... Single pulse 0.1 0.0 1.E-03 1.E-01 1.E+00 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 10000 1000 100 1.2 1.4 1.6 1.8 STPS3060CW /R th(j-c) t (s) p 1.E-02 1.E- =tp/T 1.E+00 F=1MHz V =30mV OSC RMS T =25°C j 100 3/4 ...
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... Ordering type Marking STPS3060CW STPS3060CW Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...