1SS181T5LFT Toshiba, 1SS181T5LFT Datasheet
1SS181T5LFT
Manufacturer Part Number
1SS181T5LFT
Description
DIODE ULT HS 80V ULT HS SC-59
Manufacturer
Toshiba
Datasheet
1.1SS181T5LFT.pdf
(3 pages)
Specifications of 1SS181T5LFT
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-59
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Anode
Reverse Voltage
85 V
Forward Voltage Drop
1.2 V
Recovery Time
4 ns
Forward Continuous Current
0.3 A
Max Surge Current
2 A
Reverse Current Ir
0.5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ultra High Speed Switching Application
Absolute Maximum Ratings
Electrical Characteristics
Marking
Small package
Low forward voltage
Fast reverse recovery time : t
Small total capacitance
Note: Using continuously under heavy loads (e.g. the application of high
*:
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit rating. Total rating = Unit rating × 1.5.
Characteristic
Characteristic
: SC-59
: V
: C
rr
TOSHIBA Diode Silicon Epitaxial Planar Type
F (3)
T
= 1.6ns (Typ.)
= 2.2pF (Typ.)
= 0.92V (Typ.)
(Ta = 25°C)
Symbol
Symbol
V
V
V
I
I
I
V
R (1)
R (2)
T
I
FSM
V
F (1)
F (2)
F (3)
C
FM
I
t
T
RM
P
stg
O
rr
R
T
j
1SS181
Circuit
Test
−55~125
―
―
―
―
―
―
―
300 (*)
100 (*)
Rating
2 (*)
150
125
85
80
1
I
I
I
V
V
V
I
F
F
F
F
R
R
R
= 1mA
= 10mA
= 100mAs
= 10mA (Fig.1)
= 30V
= 80V
= 0, f = 1MHz
Test Condition
Unit
mW
mA
mA
°C
°C
V
V
A
Weight: 0.012g (typ.)
JEDEC
JEITA
TOSHIBA
Min
―
―
―
―
―
―
―
Typ.
0.61
0.74
0.92
2.2
1.6
―
―
TO-236MOD
1-3G1E
SC-59
2007-11-01
1.20
Max
0.1
0.5
4.0
4.0
―
―
1SS181
Unit: mm
Unit
μA
pF
ns
V
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1SS181T5LFT Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit rating. Total rating = Unit rating × ...
Page 2
Fig.1 Reverse recovery time test circuit ( 1SS181 2007-11-01 ...
Page 3
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...