1SS226T5LFT Toshiba, 1SS226T5LFT Datasheet

1SS226T5LFT

Manufacturer Part Number

1SS226T5LFT

Description

DIODE ULTRA HS 80V 100MA SC-59

Manufacturer

Toshiba

Datasheet

1.1SS226T5LFT.pdf (3 pages)

Specifications of 1SS226T5LFT

Voltage - Forward (vf) (max) @ If

1.2V @ 100mA

Current - Reverse Leakage @ Vr

500nA @ 80V

Current - Average Rectified (io) (per Diode)

100mA

Voltage - Dc Reverse (vr) (max)

80V

Reverse Recovery Time (trr)

4ns

Diode Type

Standard

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SC-59

Product

Ultra Fast Recovery Rectifier

Configuration

Dual Series

Reverse Voltage

85 V

Forward Voltage Drop

1.2 V

Recovery Time

4 ns

Forward Continuous Current

0.1 A

Max Surge Current

2 A

Reverse Current Ir

0.5 uA @ 80 V

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 125 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 3
Download datasheet (175Kb)

Ultra High Speed Switching Application

Absolute Maximum Ratings

Electrical Characteristics

Marking

Small package

Low forward voltage

Fast reverse recovery time : t

Small total capacitance

Note: Using continuously under heavy loads (e.g. the application of high

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

Junction temperature

Storage temperature range

(*)

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = Unit rating × 0.7.

Characteristic

: SC-59

: V

: C

TOSHIBA Diode Silicon Epitaxial Planar Type

F (3)

= 1.6ns (typ.)

= 0.9pF (typ.)

(Ta = 25°C)

= 0.9V (typ.)

(Ta = 25°C)

Symbol

R (1)

R (2)

FSM

F (1)

F (2)

F (3)

stg

1SS226

Circuit

Test

―

−55~125

300 (*)

100 (*)

Rating

2 (*)

150

125

= 1mA

= 10mA

= 100mA

= 10mA (Fig.1)

= 30V

= 80V

= 0, f = 1MH

Test Condition

Unit

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.012g (typ.)

Min

―

Typ.

0.60

0.72

0.90

0.9

1.6

TO−236MOD

―

1−3G1G

SC−59

2007-11-01

1.20

Max

0.1

0.5

3.0

4.0

―

1SS226

Unit: mm

Unit

μA

Related parts for 1SS226T5LFT

1SS226T5LFT Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Fig.1 Reverse recovery time test circuit ( 1SS226 2007-11-01 ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords

1ss226
1ss22
1SS226T5LFT datasheet
1SS226T5LFT data sheet
1SS226T5LFT pdf datasheet
1SS226T5LFT component
1SS226T5LFT part
1SS226T5LFT distributor
1SS226T5LFT RoHS
1SS226T5LFT datasheet download