BAV99E6327 Infineon Technologies, BAV99E6327 Datasheet
BAV99E6327
Manufacturer Part Number
BAV99E6327
Description
DIODE SWITCHING 80V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BAV99E6327.pdf
(4 pages)
Specifications of BAV99E6327
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
150nA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV99E6327XT
BAV99INTR
BAV99XTINTR
BAV99XTINTR
SP000010350
BAV99INTR
BAV99XTINTR
BAV99XTINTR
SP000010350
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV99E6327
Manufacturer:
COEV
Quantity:
350
Part Number:
BAV99E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Silicon Switching Diode Array
Type
BAV99
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
For high-speed switching applications
Connected in series
thJA
please refer to Application Note Thermal Resistance
Marking
A7s
1)
S
= 31 °C
s
1 = A1
1
Pin Configuration
1
2 = C2
3
Symbol
V
V
I
I
P
T
T
R
F
FS
j
stg
R
RM
tot
thJS
EHA07005
2
3=C1/A2
-65 ... 150
3
Value
200
330
150
4.5
70
70
360
Package
SOT23
1
Jul-30-2001
VPS05161
BAV99
Unit
V
mA
A
mW
°C
K/W
2
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