MMBD7000LT1G ON Semiconductor, MMBD7000LT1G Datasheet
MMBD7000LT1G
Manufacturer Part Number
MMBD7000LT1G
Description
DIODE SWITCH DUAL 100V SOT23
Manufacturer
ON Semiconductor
Specifications of MMBD7000LT1G
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
3µA @ 100V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
3 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
1.5 pF
Current, Forward
200 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236AB)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
1.1 V
Voltage, Reverse
100 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.2A
Rev Curr
3uA
Peak Non-repetitive Surge Current (max)
0.5A
Forward Voltage
1.1V
Operating Temp Range
-55C to 150C
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD7000LT1GOS
MMBD7000LT1GOS
MMBD7000LT1GOSTR
MMBD7000LT1GOS
MMBD7000LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD7000LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBD7000LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBD7000LT1G
Dual Switching Diode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
MAXIMUM RATINGS (EACH DIODE)
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction to
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1)T
Derate above 25°C
Ambient
Alumina Substrate, (Note 2)
T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
A
= 25°C
Rating
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to +150
Value
Max
100
200
500
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBD7000LT1G
MMBD7000LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
1
(Note: Microdot may be in either location)
M5C
M
G
ORDERING INFORMATION
ANODE
2
1
MARKING DIAGRAM
http://onsemi.com
3
CATHODE/ANODE
1
= Specific Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
M5C MG
3
SOT−23 (TO−236AB)
Publication Order Number:
G
CASE 318
STYLE 11
10,000 Tape & Reel
3000 Tape & Reel
CATHODE
MMBD7000LT1/D
Shipping
2
†
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MMBD7000LT1G Summary of contents
Page 1
... Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBD7000LT1G SOT−23 3000 Tape & Reel (Pb−Free) MMBD7000LT3G SOT−23 10,000 Tape & Reel (Pb−Free) † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) (BR) Reverse Voltage Leakage Current ( Vdc 100 Vdc Vdc, 125°C) R Forward Voltage (I = 1.0 mAdc) F ...
Page 3
CURVES APPLICABLE TO EACH DIODE 100 T = 85° 1.0 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 150° 125° ...
Page 4
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...