MBR3045WTG ON Semiconductor, MBR3045WTG Datasheet

MBR3045WTG

Manufacturer Part Number

MBR3045WTG

Description

DIODE SCHOTTKY 45V 15A TO-247

Manufacturer

ON Semiconductor

Series

SWITCHMODE™r

Datasheet

1.MBR3045WTG.pdf (4 pages)

Specifications of MBR3045WTG

Voltage - Forward (vf) (max) @ If

760mV @ 30A

Current - Reverse Leakage @ Vr

1mA @ 45V

Current - Average Rectified (io) (per Diode)

15A

Voltage - Dc Reverse (vr) (max)

45V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Product

Schottky Diodes

Peak Reverse Voltage

45 V

Forward Continuous Current

30 A

Max Surge Current

200 A

Configuration

Dual Common Cathode

Forward Voltage Drop

0.76 V

Maximum Reverse Leakage Current

1000 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR3045WTG

Manufacturer:

Quantity:

12 500

Current page: 1 of 4
Download datasheet (137Kb)

MBR3045WT

SWITCHMODEt

Power Rectifier

with a platinum barrier metal.

Features

•

Mechanical Characteristics

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

March, 2010 − Rev. 4

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated V

Peak Repetitive Forward Current,

Non−Repetitive Peak Surge Current

Peak Repetitive Reverse Current (2.0 ms,

Storage Temperature Range

Operating Junction Temperature (Note 1)

Peak Surge Junction Temperature

Voltage Rate of Change (Rated V

These state−of−the−art devices use the Schottky Barrier principle

Parallel Operation at Full Rating

Leads are Readily Solderable

260°C Max. for 10 Seconds

Dual Diode Construction; Terminals 1 and 3 may be Connected for

Guardring for Stress Protection

Low Forward Voltage

175°C Operating Junction Temperature

Popular TO−247 Package

Pb−Free Package is Available*

Case: Epoxy, Molded

Weight: 4.3 Grams (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

Lead Temperature for Soldering Purposes:

Junction−to−Ambient: dP

(Rated V

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

1.0 kHz) Per Diode (See Figure 6)

(Forward Current Applied)

, T

, Square Wave, 20 kHz)

= 105°C)

Rating

/dT

Per Device

Per Diode

< 1/R

)

qJA

Symbol

dv/dt

F(AV)

RRM

FRM

FSM

RWM

RRM

J(pk)

stg

−65 to +175

10,000

Max

200

175

2.0

V/ms

Unit

°C

MBR3045WT

MBR3045WTG

Device

30 AMPERES, 45 VOLTS

SCHOTTKY BARRIER

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

RECTIFIER

MBR3045WT

= Assembly Location

= Year

= Work Week

= Pb−Free Package

AYWWG

(Pb−Free)

Package

TO−247

Publication Order Number:

CASE 340L

PLASTIC

TO−247

30 Units/Rail

MBR3045WT/D

Shipping

Related parts for MBR3045WTG

MBR3045WTG Summary of contents

Page 1

... V/ http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS TO−247 2 CASE 340L 3 PLASTIC MARKING DIAGRAM MBR3045WT AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR3045WT TO−247 30 Units/Rail MBR3045WTG TO−247 30 Units/Rail (Pb−Free) Publication Order Number: MBR3045WT/D ...

Page 2

THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note Amps 125° Amps 125° Amps ...

Page 3

(RESISTIVE LOAD 5 20, 10, 5 (CAPACITIVE LOAD 100 110 120 T , CASE TEMPERATURE (°C) C Figure 3. Current Derating ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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